SI4840BDY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4840BDY-T1-GE3TR-ND

Manufacturer Part#:

SI4840BDY-T1-GE3

Price: $ 0.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 19A 8SOIC
More Detail: N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface ...
DataSheet: SI4840BDY-T1-GE3 datasheetSI4840BDY-T1-GE3 Datasheet/PDF
Quantity: 2500
1 +: $ 0.38400
10 +: $ 0.37248
100 +: $ 0.36480
1000 +: $ 0.35712
10000 +: $ 0.34560
Stock 2500Can Ship Immediately
$ 0.38
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4840BDY-T1-GE3 is an advanced FET (field effect transistor) manufactured by Vishay Semiconductor. This device is an N-channel depletion-mode FET and is designed for high-speed low frequency (kHz) switching applications. It is also suitable for various other applications such as audio amplifier circuits, high speed switching circuits and voltage regulators.

The SI4840BDY-T1-GE3 can be used as a power switch in various applications because it operates with a low drain-source voltage of 10V. This device is incorporated with a low on-resistance at the drain-source voltage of 10V. The device’s maximum drain current is 4A which makes it suitable for driving heavier loads.

The SI4840BDY-T1-GE3 has an operating temperature range of -55°C to 150°C which makes it extremely suitable for applications in harsh environments. The device also has an insulated gate with a voltage rating of 500V. This helps to protect the gate from direct exposure to high voltages.

The working principle of the SI4840BDY-T1-GE3 is based on the principle of a FET. In its structure, a gate-source voltage is applied to the gate of the FET which controls the flow of current in between the drain and the source terminals. By varying the voltage at the gate, the current flow between the source and the drain can be easily regulated.

Apart from high speed switching applications, the SI4840BDY-T1-GE3 can be used in other applications such as audio amplifier circuits, voltage regulators, DC-DC converters and RF amplifiers. The device can also be used in various power management applications such as LED lighting, LED display and robotics applications. Additionally, it can also be used in automotive systems.

In conclusion, the SI4840BDY-T1-GE3 is an advanced FET which is suitable for high speed low frequency switching applications. The device is incorporated with a low on-resistance, a low drain-source voltage of 10V and a maximum drain current of 4A. It also has an operating temperature range of -55°C to 150°C. Additionally, it is suitable for applications such as audio amplifier circuits, RF amplifiers, DC-DC converters and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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