SI4840DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4840DY-T1-GE3-ND

Manufacturer Part#:

SI4840DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 10A 8-SOIC
More Detail: N-Channel 40V 10A (Ta) 1.56W (Ta) Surface Mount 8-...
DataSheet: SI4840DY-T1-GE3 datasheetSI4840DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI4840DY-T1-GE3 is a type of N-Channel Enhancement Mode-Power MOSFET, or Metal-Oxide Semiconductor Field-Effect Transistor. It is a voltage-controlled device, used to switch electric current and voltage, to amplify electrical signals and to regulate the amount of power delivered to a device. This transistor is commonly used in motor controllers, audio amplifiers and switching applications.

An N-Channel MOSFET is generally composed of a gate, a source, a drain and its body. The gate electrode is a voltage input terminal and its potential controls the semiconductor’s capability to conduct. The source and drain terminals are the output terminals, which deliver current from the source (input) to the drain (output). The body, or substrate, is a conductive material platform for the gate, source and drain. Together, these four attributes comprise a MOSFET.

In its off state, the SI4840DY has a low on-resistance value of 2.7ohms, which is up to 50% lower than other similar transistors. This improves the device\'s efficiency, making it ideal for high current applications. A high-voltage rating of 500V also allows for a wide range of applications. The high breakdown voltage ensures increased safety in applications where high currents and voltages are present.

The SI4840DY is also built with an integrated reverse diode, which provides an extra boost in power handling capabilities. This diode is typically used for protection against current surge and reverse polarity connections, making it a great choice for motor control applications.

The SI4840DY’s working principle is based on the process of creating a channel between the source and drain, through the combination of the transistor’s gate voltage and its channel voltage. When the gate voltage is higher than the threshold voltage, it induces a channel between the source and drain, allowing current to flow. On the other hand, when the gate voltage is lower than the threshold voltage, the channel between the source and drain collapses, causing the transistor to shut off.

The SI4840DY is generally used in motor controllers, audio amplifiers and switching applications. Its low on-resistance value and high-voltage rating make it ideal for applications requiring high currents and voltages. The integrated reverse diode provides an extra layer of security and protection for applications with high current and voltage requirements. Its working principle is based on creating a channel between the source and drain, using the combination of the transistor’s gate voltage and its channel voltage.

The specific data is subject to PDF, and the above content is for reference

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