| Allicdata Part #: | SI4829DY-T1-E3-ND |
| Manufacturer Part#: |
SI4829DY-T1-E3 |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 20V 2A 8-SOIC |
| More Detail: | P-Channel 20V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface M... |
| DataSheet: | SI4829DY-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.16000 |
| 10 +: | $ 0.15520 |
| 100 +: | $ 0.15200 |
| 1000 +: | $ 0.14880 |
| 10000 +: | $ 0.14400 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
| FET Feature: | Schottky Diode (Isolated) |
| Input Capacitance (Ciss) (Max) @ Vds: | 210pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
| Series: | LITTLE FOOT® |
| Rds On (Max) @ Id, Vgs: | 215 mOhm @ 2.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI4829DY-T1-E3 is a semiconductor device known as a MOSFET, or metal-oxide-semiconductor field-effect transistor. It is also referred to as an enhancement-mode MOSFET, as it can only operate in the "on" state (as opposed to a depletion-mode MOSFET, which may also operate in the "off" state).
The SI4829DY-T1-E3 is used primarily in power applications, usually as a switch. It is capable of high-voltage operation with very low on-resistance (RdsOn). This makes it ideal for power control purposes where current must be switched rapidly and efficiently. Additionally, the switching speed of the MOSFET makes it ideal for use in high-frequency or high-speed switching applications.
The SI4829DY-T1-E3 consists of an n-type semiconductor channel and a gate dielectric. An electric field is applied across the gate dielectric when a signal voltage is applied. This electric field allows for current to flow through the channel, hence it is called an "enhancement-mode" MOSFET. When the signal voltage is dropped to zero, the current flow stops and the device is said to be "off".
The gate voltage applied to the SI4829DY-T1-E3 has a direct effect on its current carrying capability, or drain-source current (Id). When the gate voltage increases, the drain-source current increases exponentially. This means that the SI4829DY-T1-E3 can handle very large currents with just a small increase in the gate voltage.
In addition to its use as a switch in high-power applications, the SI4829DY-T1-E3 can also be used as an amplifier or in a voltage regulation circuit. The device can be used to control the voltage in a power supply circuit by using the gate voltage to regulate the output voltage.
The SI4829DY-T1-E3 is also used in power management applications, such as in laptop computers, where the device can be used to control the power load of the device or to regulate the input power. It can also be used to control the speed of a fan, or to regulate the operation of a DC motor. The device can also be used as a power supply, either as an AC/DC converter or as a DC/DC converter.
This semiconductor device is highly reliable, as it is designed to operate under extreme conditions. It is capable of handling high temperatures and high voltages. Additionally, the device is highly robust and can withstand harsh conditions, such as high-frequency switching or vibration. This makes it ideal for use in critical automotive or aerospace applications.
The SI4829DY-T1-E3 is a highly popular device, as it can be used in a variety of applications. Its small size and high efficiency make it an excellent choice for a wide range of applications. Additionally, it is one of the most popular MOSFETs available, as it is relatively inexpensive and highly reliable.
The specific data is subject to PDF, and the above content is for reference
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SI4829DY-T1-E3 Datasheet/PDF