Allicdata Part #: | SI4834CDY-T1-E3-ND |
Manufacturer Part#: |
SI4834CDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 8A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8A 2.9W Surfac... |
DataSheet: | SI4834CDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Base Part Number: | SI4834 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.9W |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SI4834CDY-T1-E3 is a array comprised of N-type MOSFETs (metal-oxide-semiconductor field-effect transistors). The device offers enhanced field-effect control, fast switching speed, and low on-state resistance for circuits needing high-power. The SI4834CDY-T1-E3 array is ideal for applications from portable wireless devices and handheld equipment itself, to high power distributed electronics like motors and amplifiers. Its applications span from automotive and industrial control to renewable energy and military operations.The silicon substrate typically used for MOSFET devices and the different types of materials used along with it give the array superior characteristics and a high resistance to temperature changes. This contributes to the wide operating temperature range of -55°C to 150°C, enabling use in a variety of extreme conditions.The MOSFET and its array design is especially useful as they can substitute for standard transistor-gate combinations, in many high-power electronic circuits that require high-speed switching and low-voltage. The MOSFET array includes multiple transistors operating in unison and connected to a single control terminal allowing current to pass through the channel. This capability allows the transistor array to channel significant currents while still controlling voltage at the gate.The SI4834CDY-T1-E3 MOSFET array operates through certain key principles. It uses voltage as the input, and current as the output. It works as a binary switch where the output can either be on or off, influenced by the input. Normally, the FET will be off, but when the voltage present at the gate is higher than the voltage present at the source, then the FET will turn on. As a result, current will be able to flow from the drain to the source.Since MOSFETs are voltage controlled, their input impedance is very high, making them low-noise with little to no distortion. This is made possible by a body diode inside the MOSFET that prevents stray electric current from leaking back to the input source. Furthermore, since the power supply voltage is connected to the gate, the gates input impedance is not affected by the load current.The SI4834CDY-T1-E3 MOSFET array is a high performance solution for a variety of high power applications ranging from automotive, industrial, military, and consumer electronics. This array is especially ideal for portable and handheld devices, where high-power distributed electronics are needed, as it enables fast switching speeds and low on-state resistance. This array is also suitable for high-temperature applications due to its wide operating temperature range.
The specific data is subject to PDF, and the above content is for reference
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