SIB411DK-T1-E3 Allicdata Electronics
Allicdata Part #:

SIB411DK-T1-E3TR-ND

Manufacturer Part#:

SIB411DK-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 9A SC75-6
More Detail: P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface ...
DataSheet: SIB411DK-T1-E3 datasheetSIB411DK-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A SIB411DK-T1-E3, better known as a planar double-diffused MOSFET, is a type of transistor used to control the electrical current and voltage that passes through a circuit. The SIB411DK-T1-E3 is a single transistor device with four terminals – the source, gate, drain, and body. The gate terminal controls the electrical current flow through the transistor and is activated by a voltage applied to the gate in order to provide adequate current flow.

The SIB411DK-T1-E3 transistor has a wide variety of applications such as computational logic, specific voltage regulation and power conditions and it is widely used in the digital switching application field. This type of transistor is a low power device, which helps to minimize the power consumption of a circuit by providing an efficient regulating current and voltage.

The working principle of the SIB411DK-T1-E3 involves the movement of electrons from one terminal (the source) to another (the drain). The control over this flow of electrons is determined by the flow of current through the gate. When no current is applied to the gate terminal, the transistor acts as an open switch and does not allow any current to pass through it. When a current is applied to the gate terminal, the transistor acts as a closed switch and allows current to flow from the source to the drain.

The SIB411DK-T1-E3 MOSFET is a highly versatile transistor and is used widely in the application fields of microprocessors, digital logic, analog circuits and in other applications involving low power consumption. It is a reliable and durable device which provides an efficient current and voltage regulation and is capable of withstanding high voltages and temperatures.

The SIB411DK-T1-E3 brings great flexibility to circuit design and its efficient current and voltage regulation greatly improves the power efficiency of the circuit. In conclusion, it can be seen that the SIB411DK-T1-E3 is an extremely useful and versatile transistor for regulating electrical current and voltage for various applications.

The specific data is subject to PDF, and the above content is for reference

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