Allicdata Part #: | SIB441EDK-T1-GE3TR-ND |
Manufacturer Part#: |
SIB441EDK-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 9A PPAK SC75-6L |
More Detail: | P-Channel 12V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface ... |
DataSheet: | SIB441EDK-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | PowerPAK® SC-75-6L |
Supplier Device Package: | PowerPAK® SC-75-6L Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 13W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1180pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25.5 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIB441EDK-T1-GE3 is a single N-channel PowerTrench MOSFET. It is commonly used in power management applications, where it switches and regulates the amount of voltage entering or leaving a circuit. The MOSFET offers high cut-off frequency, as well as high efficiency, which makes it an ideal choice for switching applications. The SIB441EDK-T1-GE3 also has a very low on-resistance, which reduces conduction losses, and a low threshold voltage, which allows for increased efficiency.
The working principle of the SIB441EDK-T1-GE3 is based on a process of voltage and current control. The MOSFET is controlled by its gates, which act like electrical switches and regulate the amount of voltage and current entering or leaving the device. This is accomplished by varying the width of a “channel” between two metal plates. This “channel” is formed by the depletion region between N-type and P-type semiconductor material. When a positive voltage is applied to the gates of the MOSFET, this forms an electromagnet which attracts the electrons and leads them to the “channel”. This builds up the electric field around the “channel”, creating a current path between the source and drain. When the current reaches the drain, the voltage of the drain is lowered and the current is regulated. This process is known as the “Body Effect”, where the voltage applied to the gates alters the voltage at the drain.
The SIB441EDK-T1-GE3 is ideal for a wide range of applications, including power management, DC-DC converters, voltage regulators, motor control, and audio amplifiers. It is also suitable for automotive, industrial and consumer applications, due to its low on-resistance and high cut-off frequency. This makes the SIB441EDK-T1-GE3 suitable for a broad range of applications, including those where efficiency and high frequency switching are essential.
In conclusion, the SIB441EDK-T1-GE3 is an excellent choice for a wide range of applications, due to its high cut-off frequency, low on-resistance, and low threshold voltage. It is ideal for power management, DC-DC converter, voltage regulator and motor control applications, making it an ideal choice for a wide range of electronic devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIB412DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 9A SC75-6... |
SIB413DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A SC75-6... |
SIB414DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 8V 9A PPAK SC... |
SIB415DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 9A SC75-6... |
SIB417DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 9A SC75-6P... |
SIB419DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 9A SC75-6... |
SIB455EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 9A SC-75-... |
SIB411DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A PPAK S... |
SIB411DK-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A SC75-6... |
SIB412DK-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 9A SC75-6... |
SIB457EDK-T1-GE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET P-CH 20V 9A PPAK S... |
SIB406EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 6A SC-75-... |
SIB422EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 9A SC-75-... |
SIB408DK-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET N-CH 30V 7A PPAK S... |
SIB433EDK-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET P-CH 20V 9A SC-75-... |
SIB404DK-T1-GE3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET N-CH 12V 9A SC-75-... |
SIB452DK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 190V 1.5A SC7... |
SIB417AEDK-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 8V 9A PWRPACK... |
SIB437EDKT-T1-GE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET P-CH 8V 9A SC-75-6... |
SIB488DK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 9A SC75-6... |
SIB410DK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 9A 8SON-C... |
SIB441EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 9A PPAK S... |
SIB456DK-T1-GE3 | Vishay Silic... | 0.14 $ | 42000 | MOSFET N-CH 100V 6.3A SC7... |
SIB417EDK-T1-GE3 | Vishay Silic... | 0.3 $ | 1000 | MOSFET P-CH 8V 9A SC75-6P... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...