SIB411DK-T1-GE3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	PowerPAK® SC-75-6L
Supplier Device Package:	PowerPAK® SC-75-6L Single
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 13W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	470pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	66 mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIB411DK-T1-GE3 is a high-performance, high-speed, low-cost, single N-Channel MOSFET. It is built on advanced Sige-technology and provides excellent cascadability and low gate drive power, making it ideal for advanced high-efficiency electronic systems. The SIB411DK-T1-GE3 is an ideal choice for single-channel power amplification. The high on-resistance, low gate drive and fast switching times make it suited for optimal voltage regulation and high-frequency power conditioning. A MOSFET is a four-terminal device composed of a source, a drain, a gate and a substrate. A MOSFET is described as an insulated-gate field-effect transistor (IGFET), because the gate is insulated from all three other terminals, allowing electrons to move in only one direction. The SIB411DK-T1-GE3 N-channel is a binary device that is either “on” or “off”. When there is no signal present to the gate, the drain is shorted to the source, creating a low resistance path through the MOSFET. When a voltage signal is sent to the gate, the path becomes open, creating a high resistance path through the MOSFET. The SIB411DK-T1-GE3 is designed to provide high-power operation and low gate drive power that allows for efficient and high-speed switching. The on-resistance is low and is designed to maximize energy efficiency. The maximum drain-source voltage is specified up to 100 V and the current DC drain-source is rated up to 15 A. It has avalanche-rugged characteristics and is designed to withstand surge currents up to 10 A. The switching speed is fast enough for high-speed applications and is specified at 30 ns maximum. It is suitable for applications that require very fast switching as well as low gate drive power. The SIB411DK-T1-GE3 MOSFET can be used in power amplifiers, DC-DC converters, LED drivers, motor control, power supplies and switching applications. It is a great choice for automotive, telecom, networking and industrial applications. In conclusion, the SIB411DK-T1-GE3 is a single N-channel MOSFET with excellent performance, low gate drive power, high on-resistance and fast switching time, making it an ideal choice for single-channel power amplification and high-speed applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description