SIB417EDK-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIB417EDK-T1-GE3 is an Integrated Circuit (IC) which belongs to the family of transistors and field effect transistors (FETs and MOSFETs). Specifically, it is a single E-mode Field Effect Transistor (FET). It is designed to provide superior results and reliability when operating in environments requiring power, reliability, and thermal stability. Its application field is in the industrial, automotive, aerospace, and medical industries, as well as any other application that requires high performance, power management, or reliability.

The SIB417EDK-T1-GE3 is a FET with an epitaxial source. It is based on a unique process that combines high voltage, low on-resistance, low cross-talk, high pulse response and high performance. This ensures that the SIB417EDK-T1-GE3 performs consistently over the entire range of operation. The fabrication process also helps maintain the performance parameters of the device, providing superior performance and reliability over time.

The SIB417EDK-T1-GE3 offers very low off-state resistance and high breakdown voltage, making it ideal for pulse width modulation (PWM) and other high-power applications. Its input capacitance is also relatively low, allowing for quick switching with minimal voltage loss. It provides excellent thermal stability, contributing to longer life and better reliability. The device also has superior EMI and RFI protection, allowing it to preserve signal quality and reduce interference.

The working principle of the SIB417EDK-T1-GE3 is based on voltage-controlled bipolar current conduction. When a voltage is applied to the gate, it creates a field between the gate and the source, which generates a strong electric current. This current then passes through the drain and can be used to control a variety of processes. The SIB417EDK-T1-GE3 is also known for its superior noise immunity, allowing it to withstand even the most extreme noise environments.

The SIB417EDK-T1-GE3 is an ideal choice for high power, high temperature, and high current applications that require power and reliability. Its unique design allows for superior performance, power management, and reliability. The low on-resistance, low cross-talk, high pulse response, and high performance ensures that it performs consistently across the entire range of operation. Its superior EMI and RFI protection also allows it to preserve signal quality and reduce interference. When it comes to finding a reliable IC for high power, high current, and high temperature applications, the SIB417EDK-T1-GE3 is a great choice.

The specific data is subject to PDF, and the above content is for reference