SIB455EDK-T1-GE3

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The SIB455EDK-T1-GE3 series of transistors are employed in many electronic devices and applications as well as heavy equipment, aerospace, and military electronics. This series of power MOSFETs feature an integrated N-channel MOSFET, breakdown voltage of 40V, drain current of 0.825 amp, maximum gate voltage of 28V, RMS on-state resistance of 0.075 ohm, and maximum channel temperature of 150°C.

The MOSFET structure of the SIB455EDK-T1-GE3 devices consists of three distinct regions of doped silicon known as the source, the gate, and the drain. These regions are connected as a series of ohmic contacts and create an effective semiconductor junction. The MOSFET works by applying a voltage between the source and gate terminals that in turn attracts junctions to the surface with a distinct charge. Thus, the MOSFET acts as a switch wherein the on/off transition of the switch is controlled by the amount of charge on the gate.

The source terminal of the SIB455EDK-T1-GE3 transistor acts as the reference point of the device, and the output of the device is the current the drain. A controlling signal is then applied to the gate terminal, which controls the conductive path between the source and drain terminals. This is done by adjusting the effective voltage between the source and gate terminals, thereby controlling the width of the channel.

The advantages of the SIB455EDK-T1-GE3 series of transistors include low on-state resistance, low input capacitance, low gate drive current, and fast switching speed. Additionally, they offer high breakdown voltage, high input impedance, and low leakage current. Furthermore, these transistors can operate at higher temperatures than traditional transistors and thus are used in more rugged applications.

The application fields of the SIB455EDK-T1-GE3 transistors include high-decibel audio amplification, motor control circuits, advanced power supplies, servo control, power grid regulators, and general-purpose switching applications. They are also used in gated logic, power conversion, and high-temperature applications. In general, these transistors are well suited for applications that require maximum power dissipation and low-impedance characteristics.

In conclusion, the SIB455EDK-T1-GE3 series of transistors are an excellent choice for a wide range of applications. With its integrated MOSFET, breakdown voltage of 40V, low gate drive current, and maximum channel temperature of 150°C, it is an ideal choice for applications that require higher power levels and more rugged designs. As such, the SIB455EDK-T1-GE3 offering offers great performance and reliability in a wide range of use cases.

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