SIB457EDK-T1-GE3

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The SIB457EDK-T1-GE3 transistor is a power MOSFET used in a variety of applications, such as amplifier circuits, high-side switching circuits, and power regulators. It is based on a vertical power MOSFET structure, and has been designed to provide a practical, robust, high-efficiency device that features low on-resistance and low gate-charge. It is particularly suitable for very low voltage high-power applications.

The SIB457EDK-T1-GE3 is a discrete off-line MOSFET that is commonly used in electronics applications. It is often used in amplifier circuits, load switches, and voltage regulators. It is available in a compact, surface-mountable SMD package, and has a drain-source breakdown voltage (VDS) of 45V. It has a maximum drain current (ID) of 36A, a maximum source-drain diode voltage (VSD) of 60V, and a maximum gate-source diode voltage (VGS) of 12V. It has an on-resistance varying with temperature of 14mOhms, and a gate-source threshold voltage of 4V.

The MOSFET structure of the SIB457EDK-T1-GE3 is based on vertical devices, which facilitates higher current ratings while minimizing size. This feature makes it suitable for applications in space-constrained areas. It also features an ultra-low gate charge, which is useful for applications that require faster switching operations. Its high gate-resistance also makes it suitable for applications when protection from external noise is important. Its low body diode forward voltage also makes it suitable for applications that involve high load currents.

The SIB457EDK-T1-GE3 is a n-channel device and operates according to the principle of field-effect transistors (FETs). The device relies on an electric field, generated by gate voltage, to control the channel resistance between the drain and source. The junction between the channel and the body of the MOSFET is known as the body diode, and when a reverse bias is applied to the drain and source, current flows through the body diode. This can cause higher power dissipation, due to leakage, and may require additional power-handling measures.

The working principle of the SIB457EDK-T1-GE3 is based on the fact that by controlling the current flow from the source to the drain, a voltage is applied across the channel, resulting in a change in the channel resistance. When the voltage is increased, the resistance decreases, allowing more current to flow, thus turning the MOSFET “on” and allowing the current to flow between the source and the drain. When the voltage is decreased, the resistance increases, thus turning the MOSFET “off” and preventing current from flowing between the source and the drain.

The MOSFETs of the SIB457EDK-T1-GE3 device are designed to provide reliable and superior performance in a variety of different applications. The MOSFETs are suitable for use in a wide range of circuits, including audio amplifiers, switch mode power supplies, motor control circuits, and current-sensing circuits. Additionally, the device has been designed to provide robust thermal performance, making it suitable for use in harsh environments. The device is also certified for use in automotive applications.

In summary, the SIB457EDK-T1-GE3 is a power MOSFET used in a variety of applications, such as amplifier circuits, high-side switching circuits, and power regulators. It is based on a vertical power MOSFET structure and provides a practical, robust, high-efficiency device that features low on-resistance and low gate charge. The MOSFETs are suitable for use in a wide range of circuits, including audio amplifiers, switch mode power supplies, motor control circuits, and current-sensing circuits. The device has been designed to provide robust thermal performance, making it suitable for use in harsh environments, and to be certified for use in automotive applications.

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