SIB452DK-T1-GE3

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The SIB452DK-T1-GE3 is a high voltage, lateral, N-channel power MOSFETs specifically designed as an optimized solution for switching converters used in offline and DC-DC applications.

This type of MOSFETs offers a voltage range of 500V with high efficiency and minimal switching losses. The SIB452DK-T1-GE3 is typically used in applications requiring large current flow. Due to its extremely low on-state resistance, it is particularly suitable for power supply applications.

The SIB452DK-T1-GE3 MOSFETs offer a number of desirable characteristics, including fast switching speed, good thermal resistance, low gate-source capacitance, and excellent linearity in the region of operation.

The working principle of the SIB452DK-T1-GE3 is based on the fact that MOSFETs divide the channel into source and drain sections, with the channel housing the channel of the conduction electrons. The source and drain section are not connected to each other, but they are connected to the gate. When a voltage is applied between the gate and source, the MOSFET affects the channel, controlling the current. When no voltage is applied to the gate, the channel remains off, resulting in no current flowing through it.

Additionally, the SIB452DK-T1-GE3 offers high switching frequencies, allowing for the use of smaller inductors, reducing system size and cost.

For applications where the switching frequency is too low and a large inductor is required, the SIB452DK-T1-GE3 has the option to utilize a Schottky diode for the freewheel current path, further reducing system cost.

The SIB452DK-T1-GE3 is ideal for low-noise operation in applications such as offline and DC/DC converters, power supplies, motor drives and switched mode power systems.

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