SIB413DK-T1-GE3

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	PowerPAK® SC-75-6L
Supplier Device Package:	PowerPAK® SC-75-6L Single
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 13W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	357pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	7.63nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	75 mOhm @ 6.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SIB413DK-T1-GE3 Application Field and Working Principle

The SIB413DK-T1-GE3 is a MOSFET or Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed to transfer electrical current between two separate circuits. It is a three-terminal device, built around a gate and drain area, which usually consists of a single semiconductor slab of N or P type material.MOSFETs, due to their low on-state resistance, are widely used in the electronics industry and are typically used as switches to control high-powered loads or circuits that require a high level of isolation and noise reduction. SIB413DK-T1-GE3 MOSFETs are specifically designed for high frequency switching and dynamic low voltage operation. They feature an ultra-small package architecture that makes them ideal for use in a variety of applications including motor control, audio, power supplies and other high-frequency switches.SIB413DK-T1-GE3 MOSFETs feature a high-speed switching performance, making them an excellent choice for audio applications. They also feature a low on-resistance and low input capacitance, making them ideal for efficient switching and clean audio. Additionally, their low voltage operation can be particularly useful for audio amplification and power supply design.In order to operate, the SIB413DK-T1-GE3 MOSFET must first be activated. When the gate voltage is higher than the source voltage, the circuit is “on” and current will flow. This is referred to as the “on” or “gate-on” state. When the gate voltage is lower than the source voltage, the circuit is “off” and current will not flow. This is referred to as the “off” or “gate-off” state.It is important to note that the SIB413DK-T1-GE3 MOSFET can be damaged if subject to excessive current or voltage. Therefore, proper design procedures should be followed to ensure the device operates within its specified parameters. If the device is driven outside of its rated voltage and current limits, it is likely that the device will fail.The SIB413DK-T1-GE3 MOSFET is a versatile device and can be used in a variety of applications. Its small size and high performance make it well suited for motor control, audio, power supplies and other high-frequency switching applications. With its low noise and high linearity, this device can be used as an efficient switch solution with excellent performance. Additionally, its low on-resistance and low capacitance make it an ideal power-efficient switch in audio applications.

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