SIB414DK-T1-GE3

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SIB414DK-T1-GE3 is a discrete MOSFET that can be used in different application fields such as power dissipation, control circuits, voltage regulator, and so on. Furthermore, it is created by extensive layout of power MOSFET structure which makes it perfectly suitable for a variety of applications. As a single MOSFET, SIB414DK-T1-GE3 can be used for switch mode power supply, DC-DC converter, or inverter circuits.

In terms of its working principle, this single MOSFET is operated by using depletion mode capacitance instead of the typical working mode of depletion/enhancement type MOSFETs. In contrast to the moment of main current internal gate-to-source capacitance when the main current is passed, SIB414DK-T1-GE3 is characterized by the additional moment of depletion-mode output resistance at the initial moment of main current which can modulate the drain current. This creates an effect that the circuit response speed increases substantially.

Furthermore, the on state resistance of SIB414DK-T1-GE3 is quite low and the body diode reverse current-carrying capacity is enhanced to 5A. Thus, it can safely operate in high-speed operation such as motor control under the condition of low gate drive power. Lastly, it is suitable for a wide variety of voltage levels, ranging from 8V to 60V DC.

In summary, SIB414DK-T1-GE3 is a single MOSFET transistor with a number of advantageous features such as a wide voltage range, an enhanced body diode reverse current-carrying capacity, and a fast circuit response speed. These features make it an outstanding choice for use in a wide range of applications.

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