SIB488DK-T1-GE3

SIB488DK-T1-GE3 is a power MOSFET (metal oxide semiconductor field effect transistor) that is designed for use in high power switching applications. It is part of a family of single-channel MOSFETs from STMicroelectronics. This particular MOSFET has an RDS(on) (max) at 6.0Ω in the logic level & 9.0Ω in the enhanced level. It can support a drain-source voltage of up to 48V and a continuous drain current of up to 12.5A.

The SIB488DK-T1-GE3 provides very low RDS(on) combined with very low gate drive requirements, making it ideal for use in high efficiency and low power applications. It is well suited to a broad range of applications, including motor drive and power supply circuits. This MOSFET is tailored for optimizing the gate charge, static and dynamic dv/dt capabilities, making it suitable for the switching of high frequency, high power loads.

Application Area

The main application area of the SIB488DK-T1-GE3 is motor drive circuits and power supplies. Its features make it especially well suited for use in high frequency, high power switching applications. It can be used to drive high power loads in a variety of automotive, industrial and consumer electronic applications that require efficient, stable, and reliable performance.

One example of a power supplies application where the SIB488DK-T1-GE3 would be a good choice is in a power factor correction (PFC) buck converter. In this type of converter the SIB488DK-T1-GE3 would act as a low side switch, controlling the current from the input to the output capacitor. By doing so, it would allow for efficient power delivery with minimal power loss.

Other applications for the SIB488DK-T1-GE3 include light dimming, motor drive circuits, and circuit breakers. It is also suitable for use in high current power supplies, like those used in telecommunications, networking, and medical equipment.

Working Principle

The SIB488DK-T1-GE3 MOSFETS utilizes the principle of "voltage gating" to control the current flow in an electronic device. This principle works by applying a voltage to the gate of the MOSFET, which then modulates the current flow through the device. The gate voltage acts as an "on" or "off" switch, controlling whether or not current will flow through the transistor when a certain voltage is applied to the gate.

When the gate voltage is below the "turn on" threshold, no current flows through the transistor. The SIB488DK-T1-GE3 can be driven by a logic level so that the gate voltage can be as low as 2V. When a voltage above the "turn on" threshold is applied to the gate, current flows through the transistor and the device is turned on.

The SIB488DK-T1-GE3 provides an efficient and reliable way to control high power loads. Its features, combined with its low RDS(on), make it an ideal solution for high power applications in both motor drive and power supply circuits.