SIB437EDKT-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIB437EDKT-T1-GE3TR-ND

Manufacturer Part#:

SIB437EDKT-T1-GE3

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 8V 9A SC-75-6
More Detail: P-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface M...
DataSheet: SIB437EDKT-T1-GE3 datasheetSIB437EDKT-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.13701
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Package / Case: PowerPAK® TSC-75-6
Supplier Device Package: PowerPAK® TSC75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
FET Feature: --
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The SIB437EDKT-T1-GE3 is a field-effect transistor (FET), specifically a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is a single transistor, meaning that it is a single discrete device. A field-effect transistor is a type of semiconductor device which is used for switching and amplifying electronic signals. The SIB437EDKT-T1-GE3 specifically is a part of the Vishay Siliconix N-Channel line of MOSFET transistors.

The SIB437EDKT-T1-GE3 is a power MOSFET, which means it is designed specifically to dissipate large amounts of power. This makes it useful for switching or amplifying power supply voltages and currents. As a fet, it is highly reliable, and able to switch large currents and voltages with fast switching times, and also low power losses. It is also protected from damage due to Electrostatic Discharge (ESD) and surge immunity, making it ideal for applications in outdoor or high-voltage applications.

The SIB437EDKT-T1-GE3 is built using a proprietary SuperJunction technology, which combines the benefits of a smaller size, low on-resistance, and good switching speeds with exceptional power handling capabilities. The device provides a low Gate Threshold Voltage of -3.3V, a maximum on-state resistance of 8.40Ω, a drain-source breakdown voltage of 650V, and an ESD protection of 2.6kV.

Due to its excellent power handling, fast switching times, high reliability and ESD protection, the SIB437EDKT-T1-GE3 is suitable for a wide variety of applications. It can be used in many power supply and amplification applications, such as power switching, in high efficiency conversion and local power control circuits, such as DC/DC converters, power MOSFET drivers and Inverters, for switching large currents and voltages. It is also particularly useful for applications in automotive and industrial environments, due to its ESD protection and surge immunity.

In summary, the SIB437EDKT-T1-GE3 is a MOSFET transistor, specifically a single N-Channel power MOSFET, which is suitable for a variety of applications in automotive and industrial environments due its excellent power handling, fast switching speeds and high reliability combined with its ESD protection and surge immunity.

The specific data is subject to PDF, and the above content is for reference

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