
Allicdata Part #: | SIB437EDKT-T1-GE3TR-ND |
Manufacturer Part#: |
SIB437EDKT-T1-GE3 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 8V 9A SC-75-6 |
More Detail: | P-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.13701 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | PowerPAK® TSC-75-6 |
Supplier Device Package: | PowerPAK® TSC75-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 13W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±5V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIB437EDKT-T1-GE3 is a field-effect transistor (FET), specifically a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is a single transistor, meaning that it is a single discrete device. A field-effect transistor is a type of semiconductor device which is used for switching and amplifying electronic signals. The SIB437EDKT-T1-GE3 specifically is a part of the Vishay Siliconix N-Channel line of MOSFET transistors.
The SIB437EDKT-T1-GE3 is a power MOSFET, which means it is designed specifically to dissipate large amounts of power. This makes it useful for switching or amplifying power supply voltages and currents. As a fet, it is highly reliable, and able to switch large currents and voltages with fast switching times, and also low power losses. It is also protected from damage due to Electrostatic Discharge (ESD) and surge immunity, making it ideal for applications in outdoor or high-voltage applications.
The SIB437EDKT-T1-GE3 is built using a proprietary SuperJunction technology, which combines the benefits of a smaller size, low on-resistance, and good switching speeds with exceptional power handling capabilities. The device provides a low Gate Threshold Voltage of -3.3V, a maximum on-state resistance of 8.40Ω, a drain-source breakdown voltage of 650V, and an ESD protection of 2.6kV.
Due to its excellent power handling, fast switching times, high reliability and ESD protection, the SIB437EDKT-T1-GE3 is suitable for a wide variety of applications. It can be used in many power supply and amplification applications, such as power switching, in high efficiency conversion and local power control circuits, such as DC/DC converters, power MOSFET drivers and Inverters, for switching large currents and voltages. It is also particularly useful for applications in automotive and industrial environments, due to its ESD protection and surge immunity.
In summary, the SIB437EDKT-T1-GE3 is a MOSFET transistor, specifically a single N-Channel power MOSFET, which is suitable for a variety of applications in automotive and industrial environments due its excellent power handling, fast switching speeds and high reliability combined with its ESD protection and surge immunity.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIB455EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 9A SC-75-... |
SIB412DK-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 9A SC75-6... |
SIB408DK-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET N-CH 30V 7A PPAK S... |
SIB411DK-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A SC75-6... |
SIB417AEDK-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 8V 9A PWRPACK... |
SIB433EDK-T1-GE3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET P-CH 20V 9A SC-75-... |
SIB456DK-T1-GE3 | Vishay Silic... | 0.14 $ | 42000 | MOSFET N-CH 100V 6.3A SC7... |
SIB422EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 9A SC-75-... |
SIB404DK-T1-GE3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET N-CH 12V 9A SC-75-... |
SIB452DK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 190V 1.5A SC7... |
SIB417DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 9A SC75-6P... |
SIB437EDKT-T1-GE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET P-CH 8V 9A SC-75-6... |
SIB419DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 9A SC75-6... |
SIB413DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A SC75-6... |
SIB457EDK-T1-GE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET P-CH 20V 9A PPAK S... |
SIB410DK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 9A 8SON-C... |
SIB406EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 6A SC-75-... |
SIB488DK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 9A SC75-6... |
SIB441EDK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 9A PPAK S... |
SIB415DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 9A SC75-6... |
SIB412DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 9A SC75-6... |
SIB417EDK-T1-GE3 | Vishay Silic... | 0.3 $ | 1000 | MOSFET P-CH 8V 9A SC75-6P... |
SIB414DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 8V 9A PPAK SC... |
SIB411DK-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 9A PPAK S... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
