SIHG25N40D-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHG25N40D-GE3 is a high voltage MOSFET, which belongs to the class of single FETs and MOSFETs. It has a drain-source voltage rating of 400V with an on-resistance of 25mΩ. It is designed to be used in applications, where power dissipation and efficiency are critical. This MOSFET has a maximum drain current of 43A and a maximum gate-source voltage of ±30V. Other features include an operating junction temperature range of -55°C to 150°C, as well as a low gate charge, low threshold voltage, and fast switching speed.

The SIHG25N40D-GE3 can be used in a variety of applications. It is suitable for a wide range of energy-efficient applications, such as smart lighting, motor control, power supplies, switches, and other industrial power equipment. It is also used in audio amplification and other consumer electronics such as radios and televisions. Moreover, its low on-resistance makes it highly efficient in power converters and systems, where it can save energy while delivering optimal performance.

The working principle of the SIHG25N40D-GE3 is based on the process of electron-hole pairs being transferred between a metal-oxide semiconductor and its adjacent layer, forming a transistor. The metal-oxide semiconductor provides a barrier between the electrical charge and the gate of the transistor. When a potential difference is established across the gate of the transistor, a small current will flow, creating an inversion layer. This inversion layer will then be able to control the current flow between the gate and the source of the transistor, allowing for current switching and amplification.

The SIHG25N40D-GE3 is a high voltage MOSFET with excellent power efficiency and fast switching speeds. It is suitable for a wide variety of energy-efficient applications such as those mentioned above. Its low on-resistance makes it highly efficient in power converters and systems, helping to save energy while delivering optimal performance.

The specific data is subject to PDF, and the above content is for reference