SIHG20N50E-GE3

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The SIHG20N50E-GE3 is a high-performance, soft-switching insulated-gate bipolar transistor (IGBT) module. It is designed for use in high power switching applications with low switching times and high efficiency, making it suitable for many industrial, automotive, lighting, and HVAC applications.

The SIHG20N50E-GE3 module is a high-power IGBT made up of a silicon-based N-channel MOSFET and a P+ (positive) channel Lateral Bipolar Plate transistor. It is designed to reach low switching losses and high efficiency, making it an ideal choice for many applications, including motor control and high-voltage inverter applications. In order to achieve these low switching losses and high efficiency, the module is composed of a high-quality IGBT die, optimized in terms of voltage, current handling, and switching speed.

The module is constructed with a dedicated press-bonded electrical insulation layer. This layer ensures electrical isolation between the die/gate/collector electrode and the substrate material of the package. This layer also helps to reduce parasitic inductances and capacitances, resulting in a very low total gate charge. It also reduces the thermal resistance of the module. This reduction helps to optimize the temperature rise of the module during operation, resulting in improved overall efficiency.

The SIHG20N50E-GE3 module has a 600V gate voltage rating, allowing it to switch higher voltages than other IGBTs. It can switch up to 560V of DC voltage and 500V of AC voltage, making it suitable for a wide range of industrial, automotive, lighting, and HVAC applications. The module also has a typical on-state voltage drop of 0.95 volts, allowing it to achieve higher power outputs with less heat dissipation, thus increasing its efficiency.

The SIHG20N50E-GE3 module features a high-speed switching time of 5.5µs, ensuring fast and reliable operation during its service life. Its short circuit withstand time is 20µs, making it suitable for a variety of high-power applications. The module also has a significant current carrying load of 170A and provides efficient power switching on both the high and low side of the circuit.

The integrated N-channel MOSFET and P+ Lateral Bipolar Plate transistor feature a wide operating range with fast switching speeds and low on-state voltage drops. This ensures improved power efficiency and reliable switching during operation. In addition, the integrated thyristor supervision circuit provides undervoltage protection for the module.

In conclusion, the SIHG20N50E-GE3 is a high-performance IGBT module designed for use in a wide range of applications. Its combination of low switching losses, high efficiency, and integrated protection provide reliable and efficient power switching in various industrial, automotive, lighting, and HVAC applications.

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