SIHG14N50D-GE3

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	208W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1144pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	58nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	400 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to SIHG14N50D-GE3 Application Field and Working PrincipleThe SIHG14N50D-GE3 is a high voltage N-channel MOSFET with very high load current and low on-resistance performance. It is in the SiHG14N50D series of power MOSFETs, which is the latest in power semiconductor technology. The SIHG14N50D-GE3 can be used in a vast range of automotive, industrial, communications, and consumer electronics applications. This article will discuss the application field, key features, and working principle of the SIHG14N50D-GE3 MOSFET. Application Field of the SIHG14N50D-GE3 MOSFETThe SIHG14N50D-GE3 MOSFET has a wide range of uses. It is suitable for switching applications in niche markets, such as server and storage power supplies, high-end automotive and industrial applications, and non-isolated DC-DC converters. The device has a wide working temperature range, up to -55°C to 175°C, making it suitable for many rugged applications, such as automotive applications, as well industrial and domestic applications where high distortion and sudden power outage prevention are key. Key Features of the SIHG14N50D-GE3 MOSFETThe SIHG14N50D-GE3 MOSFET offers a range of key features. It has very low gate charge and superb gate performance, meaning that it has low losses even in tough switching applications. It has higher current capability and higher efficiency than traditional MOSFETs, making it ideal for power-sipping and high-efficiency applications. It has an incredibly low on-resistance, making it perfect for high power applications, such as in car audio systems. It also boasts very high reliability, making it suitable for use in long-term, continuous applications and harsh environments. The Working Principle and Structure of the SIHG14N50D-GE3 MOSFETThe SIHG14N50D-GE3 MOSFET is a vertical double-diffused metal-oxide-semiconductor field-effect transistor (MOSFET). It is made up of four main components: a source, a gate, a drain, and a body. The source and drain employ the highest-grade silicon to ensure efficient operation and long device life. The source and drain are connected to each other through the channel. When a small current is applied to the gate terminal, it produces an electric field in the channel that controls the current flowing from the source to the drain. The body terminal is connected to the source and drain to form a complete circuit. The SIHG14N50D-GE3 MOSFET works on the principle of the MOSFET transistor, which is based on the voltage-controlled field effect. When a voltage is applied to the gate terminal, the electric field creates a depletion region around the gate that can affect the path of current flowing between the source and the drain. As a result, the current flow can be controlled by varying the voltage applied to the gate terminal. This makes the MOSFET an ideal device for controlling current flow in high power applications. ConclusionThe SIHG14N50D-GE3 MOSFET is a high voltage N-channel MOSFET with excellent load current and low on-resistance performance. It is ideal for a range of automotive, industrial, consumer electronics, and communications applications, as well as niche markets such as server and storage power supplies. It offers a range of key features, including very low gate charge, higher current capability and higher efficiency, low on-resistance, and high reliability. The device works on the principle of voltage-controlled field effect, using a source, gate, drain, and body to control the current flow.

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