SIHG33N65E-GE3

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The SIHG33N65E-GE3 is an enhancement mode high voltage N-channel MOSFET, designed for applications such as DC/DC converters and medium frequency inverters. The state of the art technology has advantages such as logic gate level compatibility and low on-state resistance. With this, they provide a good combination of low gate input capacitance and low on-state resistance.

The SIHG33N65E-GE3 has a maximum drain source voltage of 650V, with a drain source current of 33A. It also has a maximum drain source on-state resistance of 0.0065 Ohm and a transconductance of 375uS. The device is rated up to 175°C and has an avalanche energy of 42 mJ.

The main application for the SIHG33N65E-GE3 is in DC/DC converters as a switching device. This device can be used to transfer power from a higher to a lower voltage with efficiency and also to regulate the output voltage by varying the duty cycle. This is because its low on-state resistance allows for less power loss and its logic gate level compatibility makes it suitable for digital control.

Also, due to its low transconductance, the device is suitable for use in medium frequency inverters. An efficient inverter is essential in applications such as variable speed AC motor drives. The SIHG33N65E-GE3 can be used to switch the power between the two sources with a low on-state resistance to reduce losses. The transconductance of the device ensures that the switching between the two sources is smooth, so that the output voltage is steady.

The operating principle of the SIHG33N65E-GE3 is fairly straightforward. It has a gate, drain and source terminals, and the source is connected to ground. When a voltage is applied to the gate, the drain will be pulled towards ground and current can flow from the drain to the source. The device remains in this state until the voltage applied to the gate is removed. The device will then switch off and no current will flow.

The SIHG33N65E-GE3 is a very useful device for a variety of applications and it is able to perform efficiently thanks to its low on-state resistance and high avalanche energy. Additionally, its logic gate level compatibility makes it suitable for PWM control, which results in efficient control of the output voltage. With all these features, the SIHG33N65E-GE3 is a very powerful device and can be used in a variety of applications.

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