SIHG47N60AE-GE3

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The SIHG47N60AE-GE3 is a powerMOSFET with a vertical double-diffused metal oxide semiconductor (DMOS) process, primarily intended for use in high-voltage power applications. This powerMOSFET is characterized by its low gate charge and low drain-source on-state resistance. It has a breakdown voltage of 600V, a maximum drain current of 45A, a maximum drain-source voltage of 600V, a gate-source voltage of -20V to 20V, a maximum power dissipation of 96W, and a saturation voltage of 1.9V (max).

The SIHG47N60AE-GE3 is well suited for use in various applications, including power supplies, motor control, and audio amplifiers. Its low gate charge and low on-state resistance make it ideal for high-current applications requiring rapid switching. PowerFETs, as they are commonly called, are widely used in high-power DC-DC converters as well as high-efficiency voltage regulators.

The working principle of the SIHG47N60AE-GE3 is based on the MOSFET structure, wherein electrons are the majority carriers. A MOSFET is a field-effect transistor that uses a gate voltage to control the flow of electrons through a channel. In the case of the SIHG47N60AE-GE3, the gate voltage is applied to a transistor that is connected between the drain and the source. When a positive voltage is applied to the gate, it creates an electrostatic field that increases the conductivity of the channel, enabling the electrons to pass through. With the gate voltage off, the channel is placed in a “cut-off” state, where no current can flow.

The SIHG47N60AE-GE3 powerMOSFET offers various advantages over other types of field-effect transistors, such as its low gate charge, low on-state resistance, and low-voltage operation. This makes it an attractive choice for many power applications, such as DC-DC converters, high-efficiency voltage regulators, and motor control. Its ability to quickly switch high currents makes it ideal for applications where rapid switching is required.

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