SIHG21N65EF-GE3

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SIHG21N65EF-GE3 is a type of transistors, specifically a Field Effect Transistor (FET), more specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The device is single-ended, meaning it has only one drain connection. It is manufactured by Infineon and is suited for applications such as synchronous rectification in power supply circuits, which implement power efficiency as a key design specification.

Functional Overview

This MOSFET device is normally on and has an integral anti-reoming body diode, meaning that the threshold voltage is minimally affected by changes in body voltage. It also employs level-shift technology, which sets the direction, duration, and amplitude of voltage pulses based on the requested device state. Furthermore, the device features excellent dV/dt-ringing immunity and requires minimal gate drive, which is especially beneficial for applications with high noise environment.

Applications

SIHG21N65EF-GE3 is primarily used for synchronous rectification in power supply circuits to maximize efficiency, as well as performance and cost savings. In these circuits, the device is driven by pulse-width modulation (PWM) signals, which ultimately determines the desired output voltage. The device is also ideal for general-purpose switching and modulation applications, where its low on-resistance and small gate drive requirements are beneficial.

Working Principle

This single-ended, normally-on MOSFET device works off of a basic principle known as the depletion-mode principle. The channel of the device becomes increasingly depleted as the gate-source voltage increases from a negative value, slowly allowing the device to conduct current from the drain to the source. The device can become completely turned off if the gate voltage is sufficiently negative. When the gate voltage is sufficiently positive, the device is completely turned on and starts conducting current.

The threshold voltage of the device is the voltage needed to switch it from off to on, or vice versa. Once the device is turned on and a current begins flowing, the body diode acts as a path for current that would have otherwise run back through the device, meaning that the threshold voltage will remain minimal at all times. To use the device in synchronous rectification applications, the gate is typically driven by PWM signals of varying frequencies to achieve the desired output voltage.

Conclusion

SIHG21N65EF-GE3 is an ideal single-ended FET device for synchronous rectification in power supply circuits, where its low on-resistance and excellent dV/dt-ringing immunity are beneficial. The device also features level-shift technology and an integral anti-removing body diode, making it suitable for a variety of general-purpose switching applications as well.

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