
Allicdata Part #: | SIHG47N65E-GE3-ND |
Manufacturer Part#: |
SIHG47N65E-GE3 |
Price: | $ 5.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 650V 47A TO-247AC |
More Detail: | N-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 294 |
1 +: | $ 5.85900 |
10 +: | $ 5.68323 |
100 +: | $ 5.56605 |
1000 +: | $ 5.44887 |
10000 +: | $ 5.27310 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 417W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5682pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 273nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SIHG47N65E-GE3 is an N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that is used in various electronic applications. It has an operating temperature range of -40°C to +150°C, does not require gate current for operation, and is available in a TO-220 package. This article will discuss the application fields and working principle of the SIHG47N65E-GE3 MOSFET.
The SIHG47N65E-GE3 MOSFET is mainly used for switching applications, such as motor speed control, audio power amplification, and low-power DC power switching. It is well-suited for automotive applications, due to its low on-state resistance, high voltage tolerance, and low total gate charge. Additionally, its RoHS-compliant package is also suitable for use in industrial control applications, such as power supplies, elevator control, and lighting control systems.
The SIHG47N65E-GE3 MOSFET works on the principle of “voltage-controlled current”. The MOSFET consists of a semiconductor channel that is surrounded by insulating plates made of a highly conductive material such as doped silicon. The two oppositely charged plates sandwich the semiconductor channel, forming two semiconductor regions: the drain and the source. A voltage is applied between the gates of the two regions, creating an electrical field that forces electrons from the drain region to the source region. The magnitude of this current depends on the strength of the electric field; thus, by controlling the voltage, the current flow can be controlled as well.
The SIHG47N65E-GE3 MOSFET also features a reverse-blocking capability, which prevents the input voltage from reaching the output terminals. This property is useful in situations where back-EMF or electrostatic discharge (ESD) are present, since it prevents damage to the device. The device also has a fast switching time, making it ideal for applications that require fast response times, such as motor speed control or audio power amplification.
In conclusion, the SIHG47N65E-GE3 MOSFET is a robust and reliable device for switching applications. Its high voltage tolerance, low on-state resistance, fast switching time, and reverse-blocking capability make it suitable for both automotive and industrial applications. Additionally, its RoHS-compliant package makes it a good choice for applications that require compliance with environmental regulations.
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SIHG17N60D-E3 | Vishay Silic... | 1.89 $ | 1000 | MOSFET N-CH 600V 17A TO24... |
SIHG22N60AE-GE3 | Vishay Silic... | -- | 480 | MOSFET N-CH 600V 20A TO24... |
SIHG44N65EF-GE3 | Vishay Silic... | 7.85 $ | 464 | MOSFET N-CH 650V 46A TO24... |
SIHG17N60D-GE3 | Vishay Silic... | 1.89 $ | 1000 | MOSFET N-CH 600V 17A TO24... |
SIHG80N60E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 80A TO24... |
SIHG15N60E-GE3 | Vishay Silic... | 2.66 $ | 470 | MOSFET N-CH 600V 15A TO24... |
SIHG33N65EF-GE3 | Vishay Silic... | 5.54 $ | 191 | MOSFET N-CH 650V 31.6A TO... |
SIHG14N50D-GE3 | Vishay Silic... | 2.63 $ | 497 | MOSFET N-CH 500V 14A TO-2... |
SIHG22N60E-E3 | Vishay Silic... | 3.57 $ | 84 | MOSFET N-CH 600V 21A TO24... |
SIHG73N60AEL-GE3 | Vishay Silic... | 6.64 $ | 1000 | MOSFET N-CHAN 600V TO-247... |
SIHG21N60EF-GE3 | Vishay Silic... | -- | 207 | MOSFET N-CH 600V 21A TO-2... |
SIHG33N65E-GE3 | Vishay Silic... | 3.39 $ | 1000 | MOSFET N-CH 650V 32.4A TO... |
SIHG47N65E-GE3 | Vishay Silic... | -- | 294 | MOSFET N-CH 650V 47A TO-2... |
SIHG40N60E-GE3 | Vishay Silic... | 5.49 $ | 452 | MOSFET N-CH 600V 40A TO24... |
SIHG22N50D-GE3 | Vishay Silic... | 3.89 $ | 18 | MOSFET N-CH 500V 22A TO-2... |
SIHG30N60AEL-GE3 | Vishay Silic... | 3.05 $ | 1000 | MOSFET N-CHAN 600V TO-247... |
SIHG28N65EF-GE3 | Vishay Silic... | -- | 275 | MOSFET N-CH 650V 28A TO-2... |
SIHG20N50E-GE3 | Vishay Silic... | 2.63 $ | 9 | MOSFET N-CH 500V 19A TO-2... |
SIHG23N60E-GE3 | Vishay Silic... | -- | 828 | MOSFET N-CH 600V 23A TO24... |
SIHG28N60EF-GE3 | Vishay Silic... | 5.31 $ | 100 | MOSFET N-CH 600V 28A TO-2... |
SIHG61N65EF-GE3 | Vishay Silic... | 10.69 $ | 443 | MOSFET N-CH 650V 64A TO24... |
SIHG35N60E-GE3 | Vishay Silic... | -- | 500 | MOSFET N-CH 600V 32A TO24... |
SIHG050N60E-GE3 | Vishay Silic... | 7.83 $ | 1000 | MOSFET N-CH 600VN-Channel... |
SIHG47N60E-E3 | Vishay Silic... | 7.77 $ | 135 | MOSFET N-CH 600V 47A TO24... |
SIHG16N50C-E3 | Vishay Silic... | -- | 487 | MOSFET N-CH 500V 16A TO-2... |
SIHG73N60E-E3 | Vishay Silic... | 6.7 $ | 1000 | MOSFET N-CH 600V 73A TO24... |
SIHG22N50D-E3 | Vishay Silic... | -- | 498 | MOSFET N-CH 500V 22A TO-2... |
SIHG47N60AE-GE3 | Vishay Silic... | -- | 214 | MOSFET N-CH 600V 43A TO24... |
SIHG22N65E-GE3 | Vishay Silic... | 4.22 $ | 50 | MOSFET N-CH 650V 22A TO-2... |
SIHG25N50E-GE3 | Vishay Silic... | -- | 500 | MOSFET N-CH 500V 26A TO-2... |
SIHG24N65E-GE3 | Vishay Silic... | -- | 50 | MOSFET N-CH 650V 24A TO24... |
SIHG14N50D-E3 | Vishay Silic... | 1.58 $ | 1000 | MOSFET N-CH 500V 14A TO-2... |
SIHG17N80E-GE3 | Vishay Silic... | -- | 30 | MOSFET N-CH 800V 15A TO24... |
SIHG47N60E-GE3 | Vishay Silic... | -- | 225 | MOSFET N-CH 600V 47A TO24... |
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