SIHG47N65E-GE3 Allicdata Electronics
Allicdata Part #:

SIHG47N65E-GE3-ND

Manufacturer Part#:

SIHG47N65E-GE3

Price: $ 5.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 650V 47A TO-247AC
More Detail: N-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-...
DataSheet: SIHG47N65E-GE3 datasheetSIHG47N65E-GE3 Datasheet/PDF
Quantity: 294
1 +: $ 5.85900
10 +: $ 5.68323
100 +: $ 5.56605
1000 +: $ 5.44887
10000 +: $ 5.27310
Stock 294Can Ship Immediately
$ 5.86
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5682pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 72 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHG47N65E-GE3 is an N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that is used in various electronic applications. It has an operating temperature range of -40°C to +150°C, does not require gate current for operation, and is available in a TO-220 package. This article will discuss the application fields and working principle of the SIHG47N65E-GE3 MOSFET.

The SIHG47N65E-GE3 MOSFET is mainly used for switching applications, such as motor speed control, audio power amplification, and low-power DC power switching. It is well-suited for automotive applications, due to its low on-state resistance, high voltage tolerance, and low total gate charge. Additionally, its RoHS-compliant package is also suitable for use in industrial control applications, such as power supplies, elevator control, and lighting control systems.

The SIHG47N65E-GE3 MOSFET works on the principle of “voltage-controlled current”. The MOSFET consists of a semiconductor channel that is surrounded by insulating plates made of a highly conductive material such as doped silicon. The two oppositely charged plates sandwich the semiconductor channel, forming two semiconductor regions: the drain and the source. A voltage is applied between the gates of the two regions, creating an electrical field that forces electrons from the drain region to the source region. The magnitude of this current depends on the strength of the electric field; thus, by controlling the voltage, the current flow can be controlled as well.

The SIHG47N65E-GE3 MOSFET also features a reverse-blocking capability, which prevents the input voltage from reaching the output terminals. This property is useful in situations where back-EMF or electrostatic discharge (ESD) are present, since it prevents damage to the device. The device also has a fast switching time, making it ideal for applications that require fast response times, such as motor speed control or audio power amplification.

In conclusion, the SIHG47N65E-GE3 MOSFET is a robust and reliable device for switching applications. Its high voltage tolerance, low on-state resistance, fast switching time, and reverse-blocking capability make it suitable for both automotive and industrial applications. Additionally, its RoHS-compliant package makes it a good choice for applications that require compliance with environmental regulations.

The specific data is subject to PDF, and the above content is for reference

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