| Allicdata Part #: | SIHG80N60E-GE3-ND |
| Manufacturer Part#: |
SIHG80N60E-GE3 |
| Price: | $ 8.65 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 80A TO247AC |
| More Detail: | N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-... |
| DataSheet: | SIHG80N60E-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 8.64990 |
| 10 +: | $ 8.39040 |
| 100 +: | $ 8.21741 |
| 1000 +: | $ 8.04441 |
| 10000 +: | $ 7.78491 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 443nC @ 10V |
| Series: | E |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHG80N60E-GE3 is a type of transistor known as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a type of "Field Effect Transistor" which uses an electric field to control the conductivity between the source and the drain electrodes. The SIHG80N60E-GE3 is a particular type of MOSFET known as a "Single". This means that it is made up of a single layer of silicon and uses single-gate structure.
The use of MOSFETs in general is most commonly for providing electric power for systems such as audio amplifiers and digital circuits. In this way, SIHG80N60E-GE3 can be said to have applications across many industries in both industrial and commercial settings. The wide variety of uses includes motor control, digital communication, power conversion, and more.
The working principle of the SIHG80N60E-GE3 is related to its gate voltage. This voltage controls the amount of current that passes through the transistor, which in turn determines its operation. By adjusting the gate voltage, the transistor can be made to switch on or off, depending on the desired operation of the system. When the gate voltage is high, more current will pass through the transistor and it will be in an "on" state. When the gate voltage is low, the current will be reduced and the transistor will be in an "off" state.
The SIHG80N60E-GE3 has a number of advantages over other types of transistors. First, it is able to operate at higher voltages and currents. This makes it suitable for applications that require high power levels and high voltages. Second, it can be easily integrated into circuits, making it an ideal choice for designers of digital and analog systems. Third, the SIHG80N60E-GE3 is highly efficient, which increases its overall performance and reduces the amount of power that needs to be dissipated by the system.
In addition to these benefits, the SIHG80N60E-GE3 is also very reliable. Its large on-state resistance ensures that it can handle large current levels without overheating. It also has a fast response time, meaning that it can quickly switch between "on" and "off" states when needed. This makes it suitable for fast-changing applications such as motor control and digital communication.
The SIHG80N60E-GE3 is a highly versatile and reliable transistor that has many applications across many industries. Its ability to handle high power levels and its fast response time make it an excellent choice for designers of analog and digital circuits. Moreover, its reliability and efficiency make it a great option for long-term use in a variety of systems. The wide range of applications and benefits of the SIHG80N60E-GE3 make it an excellent choice for designers of all types of circuits.
The specific data is subject to PDF, and the above content is for reference
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| SIHG25N50E-GE3 | Vishay Silic... | -- | 500 | MOSFET N-CH 500V 26A TO-2... |
| SIHG24N65E-GE3 | Vishay Silic... | -- | 50 | MOSFET N-CH 650V 24A TO24... |
| SIHG47N60AEL-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 600VN-Chann... |
| SIHG22N60AE-GE3 | Vishay Silic... | -- | 480 | MOSFET N-CH 600V 20A TO24... |
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| SIHG30N60E-GE3 | Vishay Silic... | -- | 474 | MOSFET N-CH 600V 29A TO24... |
| SIHG47N60EF-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 47A TO24... |
| SIHG16N50C-E3 | Vishay Silic... | -- | 487 | MOSFET N-CH 500V 16A TO-2... |
| SIHG35N60E-GE3 | Vishay Silic... | -- | 500 | MOSFET N-CH 600V 32A TO24... |
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| SIHG22N60EL-GE3 | Vishay Silic... | 2.21 $ | 1000 | MOSFET N-CH 600V 21A TO24... |
| SIHG25N40D-GE3 | Vishay Silic... | 2.97 $ | 209 | MOSFET N-CH 400V 25A TO-2... |
| SIHG23N60E-GE3 | Vishay Silic... | -- | 828 | MOSFET N-CH 600V 23A TO24... |
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| SIHG25N40D-E3 | Vishay Silic... | 2.97 $ | 18 | MOSFET N-CH 400V 25A TO-2... |
| SIHG73N60E-GE3 | Vishay Silic... | -- | 481 | MOSFET N-CH 600V 73A TO24... |
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SIHG80N60E-GE3 Datasheet/PDF