SIHG70N60AEF-GE3 Allicdata Electronics
Allicdata Part #:

SIHG70N60AEF-GE3-ND

Manufacturer Part#:

SIHG70N60AEF-GE3

Price: $ 8.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 60A TO247AC
More Detail: N-Channel 600V 60A (Tc) 417W (Tc) Through Hole TO-...
DataSheet: SIHG70N60AEF-GE3 datasheetSIHG70N60AEF-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 8.05770
10 +: $ 7.32501
100 +: $ 6.22598
500 +: $ 5.31041
Stock 1000Can Ship Immediately
$ 8.86
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5348pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 410nC @ 10V
Series: EF
Rds On (Max) @ Id, Vgs: 41 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHG70N60AEF-GE3 is a silicon-based power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in high-voltage applications. It is considered a high-voltage device because it is capable of conducting voltage levels of up to 70 volts. Additionally, it also provides excellent immunity from induced noise and transients, as well as a large current-carrying capacity. Because of its features, the SIHG70N60AEF-GE3 is used in a variety of power control applications including power routing, load switching, and high-voltage load switching.

The SIHG70N60AEF-GE3 is composed of two source and drain regions, each of which is connected to a separate gate. The source and drain regions are formed of heavily doped semiconductor material, while the gate is formed of a thin layer of metal oxide. All of these components are placed within a protective package to prevent damage due to contact with other components. The drain and source regions act as current carriers, while the gate acts as a voltage switch. When a varying voltage is applied to the gate, the amount of current flowing between the drain and the source regions is changed accordingly.

When a gate voltage is applied to the SIHG70N60AEF-GE3, a field-effect is created that spreads out from the gate to the source and drain regions. This field-effect causes the electrons in the semiconductor material to either repel, or be attracted to, each other. Depending on the polarity and magnitude of the gate voltage, this field-effect either causes more electrons to be repelled, resulting in an increase in current passing through the source and drain regions, or results in more electrons being attracted, resulting in a decrease in the amount of current passing through the source and drain regions. In this way, the gate voltage can be used to both turn the device on and off, as well as adjust the amount of current passing through the device.

The SIHG70N60AEF-GE3 has a variety of applications in the power control field. Its primary use is in power routing, load switching, and high-voltage load switching applications. It can also be used in power supply design, in motor control applications, and in controlling power to HVAC systems. Additionally, it can be used in battery pack protection applications, motor driver circuits, and for power sequencing and sequencing power devices.

The SIHG70N60AEF-GE3 is an excellent tool for controlling large amounts of power in a variety of applications. Its high-voltage capability and large current carrying capacity make it an ideal choice for designers looking for a reliable solution for power control and routing. Its ability to be easily turned on and off, as well as regulated, make it a great choice for almost any power control situation.

The specific data is subject to PDF, and the above content is for reference

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