| Allicdata Part #: | SIHG70N60AEF-GE3-ND |
| Manufacturer Part#: |
SIHG70N60AEF-GE3 |
| Price: | $ 8.86 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 60A TO247AC |
| More Detail: | N-Channel 600V 60A (Tc) 417W (Tc) Through Hole TO-... |
| DataSheet: | SIHG70N60AEF-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 8.05770 |
| 10 +: | $ 7.32501 |
| 100 +: | $ 6.22598 |
| 500 +: | $ 5.31041 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 417W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5348pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 410nC @ 10V |
| Series: | EF |
| Rds On (Max) @ Id, Vgs: | 41 mOhm @ 35A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHG70N60AEF-GE3 is a silicon-based power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in high-voltage applications. It is considered a high-voltage device because it is capable of conducting voltage levels of up to 70 volts. Additionally, it also provides excellent immunity from induced noise and transients, as well as a large current-carrying capacity. Because of its features, the SIHG70N60AEF-GE3 is used in a variety of power control applications including power routing, load switching, and high-voltage load switching.
The SIHG70N60AEF-GE3 is composed of two source and drain regions, each of which is connected to a separate gate. The source and drain regions are formed of heavily doped semiconductor material, while the gate is formed of a thin layer of metal oxide. All of these components are placed within a protective package to prevent damage due to contact with other components. The drain and source regions act as current carriers, while the gate acts as a voltage switch. When a varying voltage is applied to the gate, the amount of current flowing between the drain and the source regions is changed accordingly.
When a gate voltage is applied to the SIHG70N60AEF-GE3, a field-effect is created that spreads out from the gate to the source and drain regions. This field-effect causes the electrons in the semiconductor material to either repel, or be attracted to, each other. Depending on the polarity and magnitude of the gate voltage, this field-effect either causes more electrons to be repelled, resulting in an increase in current passing through the source and drain regions, or results in more electrons being attracted, resulting in a decrease in the amount of current passing through the source and drain regions. In this way, the gate voltage can be used to both turn the device on and off, as well as adjust the amount of current passing through the device.
The SIHG70N60AEF-GE3 has a variety of applications in the power control field. Its primary use is in power routing, load switching, and high-voltage load switching applications. It can also be used in power supply design, in motor control applications, and in controlling power to HVAC systems. Additionally, it can be used in battery pack protection applications, motor driver circuits, and for power sequencing and sequencing power devices.
The SIHG70N60AEF-GE3 is an excellent tool for controlling large amounts of power in a variety of applications. Its high-voltage capability and large current carrying capacity make it an ideal choice for designers looking for a reliable solution for power control and routing. Its ability to be easily turned on and off, as well as regulated, make it a great choice for almost any power control situation.
The specific data is subject to PDF, and the above content is for reference
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| SIHG22N60AE-GE3 | Vishay Silic... | -- | 480 | MOSFET N-CH 600V 20A TO24... |
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| SIHG25N50E-GE3 | Vishay Silic... | -- | 500 | MOSFET N-CH 500V 26A TO-2... |
| SIHG24N65E-GE3 | Vishay Silic... | -- | 50 | MOSFET N-CH 650V 24A TO24... |
| SIHG22N50D-E3 | Vishay Silic... | -- | 498 | MOSFET N-CH 500V 22A TO-2... |
| SIHG47N60AE-GE3 | Vishay Silic... | -- | 214 | MOSFET N-CH 600V 43A TO24... |
| SIHG22N65E-GE3 | Vishay Silic... | 4.22 $ | 50 | MOSFET N-CH 650V 22A TO-2... |
| SIHG32N50D-GE3 | Vishay Silic... | -- | 299 | MOSFET N-CH 500V 30A TO-2... |
| SIHG32N50D-E3 | Vishay Silic... | 2.53 $ | 1000 | MOSFET N-CH 500V 30A TO-2... |
| SIHG30N60E-GE3 | Vishay Silic... | -- | 474 | MOSFET N-CH 600V 29A TO24... |
| SIHG21N65EF-GE3 | Vishay Silic... | 4.31 $ | 192 | MOSFET N-CH 650V 21A TO-2... |
| SIHG33N60E-GE3 | Vishay Silic... | -- | 197 | MOSFET N-CH 600V 33A TO-2... |
| SIHG47N65E-GE3 | Vishay Silic... | -- | 294 | MOSFET N-CH 650V 47A TO-2... |
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SIHG70N60AEF-GE3 Datasheet/PDF