SIHG22N60E-GE3 Allicdata Electronics
Allicdata Part #:

SIHG22N60E-GE3-ND

Manufacturer Part#:

SIHG22N60E-GE3

Price: $ 3.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 21A TO247AC
More Detail: N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-...
DataSheet: SIHG22N60E-GE3 datasheetSIHG22N60E-GE3 Datasheet/PDF
Quantity: 471
1 +: $ 3.57000
10 +: $ 3.46290
100 +: $ 3.39150
1000 +: $ 3.32010
10000 +: $ 3.21300
Stock 471Can Ship Immediately
$ 3.57
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHG22N60E-GE3 MOSFET is an advanced silicon-carbide (SiC) power MOSFET developed by Infineon Technologies. It is based on the same advanced SiC process technology as other Infineon power MOSFETs, but with a lower on-resistance and much faster switching than its predecessors for the same voltage and current levels.

Its basic feature is an extremely low on-resistance figure of just 0.22 ohms - one of the lowest in the industry - and a very fast switching speed of 15 nanoseconds, compared to around 25 nanoseconds of other power MOSFETs.

The SIHG22N60E-GE3’s cutting-edge performance makes it highly suitable for a wide range of applications, including DC-DC converters, automotive charging systems and renewable energy systems, among others. It has also been designed with a number of features that make it suitable for these particular applications.

In the following sections we will discuss the working principle of the SIHG22N60E-GE3 and its various application fields.

Working Principle of the SIHG22N60E-GE3

The SIHG22N60E-GE3 is a bypass transistor, meaning that it lies between the voltage source and load. Its basic function is to switch current on and off as needed. It’s a p-channel MOSFET, meaning that current flows through the transistor from drain to source through the channel.

The transistor is triggered to switch on and off by a gate-source voltage - for the SIHG22N60E-GE3, the threshold voltage is 2.5 V, meaning that when the applied gate-source voltage is greater than 2.5 V the transistor will switch on, and current can flow from drain to source. Conversely, when the applied gate-source voltage is lower than 2.5 V the transistor will switch off, and current will cease to flow.

Application Fields and Uses of the SIHG22N60E-GE3

The SIHG22N60E-GE3 is a great choice for a variety of applications due to its extremely low on-resistance, high switching speed and small size. Below are some of the most common application fields and uses:

  • DC-DC Converters: The SIHG22N60E-GE3\'s low on-resistance is perfect for high-efficiency DC-DC converters, such as those used for battery charging systems. Its fast switching speed allows it to quickly switch on and off required voltages and currents, without impacting the overall efficiency of the system.
  • Automotive Charging Systems: Its small size makes the SIHG22N60E-GE3 perfect for automotive charging systems, as it can be fitted into tight spaces. Due to its low on-resistance, it is able to efficiently pass currents at high frequencies, allowing for improved power transfer.
  • Renewable Energy Systems: The SIHG22N60E-GE3 is also well suited for renewable energy systems, both large and small. Its high efficiency and fast switching speed allow it to quickly respond to voltage and current changes, while its low on-resistance ensures minimal power is wasted.

In conclusion, the SIHG22N60E-GE3 is a great choice for applications requiring low on-resistance, high efficiency and fast switching speeds. Its low on-resistance leads to high efficiency and improved power transfer, while its fast switching speed allows it to react quickly to voltage and current changes. The small size also makes it suitable for systems where space is limited.

The specific data is subject to PDF, and the above content is for reference

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