SIHG47N60E-E3

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The SIHG47N60E-E3 is a 600V CoolMOS™ C3 ideal diode which is a fourth generation of super j unction MOSFET. This device was developed for automotive, industrial and consumer applications that require high efficiency and robust performance. The SIHG47N60E-E3 is a logical development of other CoolMOS™ technologies, enabling higher current capability, faster switching and improved temperature resistance. As a new generation of super junction MOSFET, the SIHG47N60E-E3 provides high efficiency, low R DS(on) and low losses, making it the perfect choice for power systems from automotive and industrial to consumer applications.

As a super junction MOSFET, the SIHG47N60E-E3 has a special construction of N-channel MOSFET with a vertical or a level diode in between source to drain. This is beneficial since it makes the device capable of handling higher voltages with a lower R DS(on) and ensures that the current is quickly diverted when the on-state of the power device is switched off. This makes the device the ideal choice for high efficiency, low on-resistance and faster switching systems, such as those found in automotive, industrial and consumer applications.

In terms of working principle, the source and drain are connected to the gate by their respective p and n junctions. The gate voltage is used to control the current flow through the device, and though it can also be used to generate a biasing potential for the gate, this is not necessary. Additionally, the body of the device is used to provide feedback loop, which is beneficial in limiting the voltage by providing negative feedback from the drain terminal.

In terms of application field, the SIHG47N60E-E3 is ideal for power systems with efficiency requirements because it offers maximum efficiency and low R DS(on). This is possible when the gate voltage is less than the threshold voltage, which makes it suitable for voltage regulation and power management applications. Additionally, it is also suitable for use in motor control, DC-DC converters, automotive electronics, and other high power or high performance systems.

Overall, the SIHG47N60E-E3 is a highly advanced super junction MOSFET which is suitable for various high-power or high-performance applications. The device offers a high degree of efficiency and low R DS(on) thanks to its special construction and gate voltage control, while its feedback loop also ensures that the voltage never exceeds the threshold. As such, it is an ideal choice for a variety of industrial, consumer, and automotive power systems that require high efficiency and low losses in a compact form factor.

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