SIHG47N60EF-GE3

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The SIHG47N60EF-GE3 is a MOSFET, part of the family of Field Effect Transistors (FETs). It is a single silicon N-channel high voltage MOSFET of high performance. This particular MOSFET is manufactured by Infineon, and is from the CoolMOS™ family.

A MOSFET is a type of FET, or Field Effect Transistor. The FET acts as both a voltage and current controller. FETs are basically three-terminal semiconductor devices made up of three parts: source, drain and gate. MOSFETs have source and drain terminals which can be either P-type (positive) or N-type (negative). A positive voltage applied to the gate on a PMOS type MOSFET will cause current to flow from source to drain and vice versa with NMOS type MOSFETs.

The SIHG47N60EF-GE3 MOSFET works in the same basic way that all MOSFETs do. It is a three-terminal switching device that employs the principle of electric field effect to control the flow of current between the source and drain. When the gate of the MOSFET is biased by a signal, an electric field is created between the gate and the source terminal. This electric field will cause a channel to form between the drain and source. By controlling the gate-to-source voltage (Vgs) of the MOSFET, the flow of current can be adjusted. By applying a small voltage to the gate the channel is created quickly and the current flow is controlled efficiently.

The SIHG47N60EF-GE3 MOSFET has some unique features that set it apart from other MOSFETs. It is a high voltage MOSFET which means it can handle higher voltages than conventional MOSFETs. It has a creepage distance of 8 mm – this is longer than the standard 6 mm and helps protect it against electrical stress. The package it comes in is also a TO247FH, which offers increased power dissipation and is better suited for industrial applications. The SIHG47N60EF-GE3 MOSFET is rated to handle 600V while operating at a temperature of up to 175°C.

The SIHG47N60EF-GE3 MOSFET has a wide range of potential applications. It can be used as a power MOSFET in small-signal applications such as motor control and driving higher power loads. It is well-suited for use in industrial applications such as power supplies and motor drives, as well as automotive applications like vehicle accessories. In addition, this MOSFET can be used in military and aerospace applications due to its ability to handle higher voltages and temperatures.

In conclusion, the SIHG47N60EF-GE3 MOSFET is a single silicon N-channel high voltage MOSFET of high performance. It has a wide range of applications in industrial, automotive, military and aerospace applications due to its ability to handle high voltages and temperatures. Its unique features, coupled with its reliable operation, makes it a great choice for a variety of applications.

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