SIPC03N60C3X1SA1

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The SIPC03N60C3X1SA1 is a Silicon N-Channel Trench MOSFET manufactured by Infineon Technologies. It is intended for use in off-line SMPS, lighting and home appliances, Uninterruptible Power Supplies (UPS), and other applications.

MOSFETs, or Metal-Oxide-Semiconductor Field Effect Transistors, are special types of field effect transistors (FETs) specifically designed to be operated by voltage rather than current control. They are used in many electronic circuit designs, particularly where power control is necessary. The MOSFET is similar in construction to a bipolar transistor, but the gate, source, and drain are insulated from each other and the gate is insulated from the source and drain by a thin oxide layer. This oxide layer enables the MOSFET to operate with very little power consumption and high switching speeds.

The SIPC03N60C3X1SA1 is designed as a single-channel N-type MOSFET with an integrated Schottky diode and a gate drive circuit. Its maximum drain-source voltage is 600V, with an RDS(on) of 6.3mΩ. It also has a very high input capacitance value, providing superior switching frequency and an improved signal response. Additionally, its advanced chip design includes an optimized peripheral circuitry to reduce losses and ensure reliable switching performance. It is packaged in a TO-263AB emulation form factor for easy and cost-effective assembly.

The SIPC03N60C3X1SA1 can be used in many applications where power control is essential. It is well-suited for use in off-line SMPS and UPS, as well as lighting and home appliances. Its single-channel architecture enables it to occupy a small area of the circuit board, which makes it especially suitable when a compact design is desired. It offers superior overload protection and thermal resistance, ensuring reliable performance. It can also be used in Class-D audio amplifiers, and to control other forms of power supplies.

The SIPC03N60C3X1SA1 operates by conducting current when the gate-source voltage is at least equal to the threshold voltage of the FET. When the gate-source voltage is less than the threshold voltage, current does not flow and the MOSFET is said to be in “off” state. This is known as the “cut-off” state and is often used to switch power on or off. In order to conduct current, the gate-source voltage must be greater than the threshold voltage, as well as the total on-state resistance of the MOSFET. This is known as the “on-state” resistance, and it is what determines the current that can flow through the device.

The SIPC03N60C3X1SA1 can be used in many applications where power control is necessary. Its single-channel architecture and integrated drive circuit makes it an ideal choice for applications that require a small area of the circuit board and reliable operation under high temperature and current conditions. Its ultra-low on-state resistance makes it the perfect choice for systems where a low power consumption is desired. Its advanced gate drive circuit is optimized for use in switching applications, making it the ideal choice for use in off-line SMPS, lighting and home appliances, and Uninterruptible Power Supplies (UPS).

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