SIPC69N60C3X1SA1 Allicdata Electronics
Allicdata Part #:

SIPC69N60C3X1SA1-ND

Manufacturer Part#:

SIPC69N60C3X1SA1

Price: $ 9.74
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR N-CH
More Detail:
DataSheet: SIPC69N60C3X1SA1 datasheetSIPC69N60C3X1SA1 Datasheet/PDF
Quantity: 1000
1 +: $ 8.85150
Stock 1000Can Ship Immediately
$ 9.74
Specifications
Series: *
Part Status: Active
Description

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The SIPC69N60C3X1SA1 transistor is a high performance N-channel MOSFET for use as a switching device. It is a single device, meaning that it has only one drain and one source. It is a high voltage device with a high drain-source breakdown voltage of 600V and a drain-source ON resistance of 60mΩ. It is also a low power device, with a maximum Gate Threshold Voltage of -4.5V and a maximum Drain Current of 69A.

The SIPC69N60C3X1SA1 is suitable for use in a variety of applications. It can be used in lighting and power control circuits, as well as in motor control, DC/DC, and AC/DC switching applications. It is also suitable for high frequency power converters, such as those used in laptop chargers, as it has a fast switching speed and a low gate charge.

The SIPC69N60C3X1SA1 is a MOSFET device, which stands for Metal Oxide Semiconductor Field Effect Transistor. It has four terminals, with the Gate, the Drain, and the Source being the most important. The Gate is used to control the amount of current flowing from the Source to the Drain. By controlling the amount of voltage applied to the Gate, you can control the flow of current in the device.

The working principle of the SIPC69N60C3X1SA1 is that when a voltage is applied to the Gate, it changes the characteristics of the device and allows current to flow from the Drain to the Source. The voltage applied to the Gate must be higher than the Gate Threshold Voltage in order for current to start flowing through the device. The higher the voltage applied to the Gate, the larger the current which will flow from the Drain to the Source.

When the SIPC69N60C3X1SA1 is used as a switching device, it is placed in series with a load. When the voltage applied to the Gate is increased, the device will start to turn ON and current will start to flow through the load. As the voltage applied to the Gate is decreased, the device will start to turn OFF and current will stop flowing through the load.

The SIPC69N60C3X1SA1 is a versatile and reliable device, making it ideal for use in a wide variety of applications. Its high voltage and high drain-source ON resistance make it suitable for use in high power, high frequency applications, while its fast switching speed makes it suitable for use in low power, low frequency applications. Its low gate charge makes it suitable for use in power converters, as well as lighting and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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SIPC46N60C3X1SA1 Infineon Tec... 3.05 $ 1000 TRANSISTOR N-CH
SIPC69N50C3X1SA2 Infineon Tec... 7.78 $ 1000 MOSFET COOL MOS SAWED WAF...
SIPC30N60C3X1SA2 Infineon Tec... 2.04 $ 1000 TRANSISTOR N-CH
SIPC05N60C3X1SA1 Infineon Tec... 0.28 $ 1000 TRANSISTOR N-CH
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SIPC18N50C3X1SA1 Infineon Tec... 1.04 $ 1000 TRANSISTOR N-CH
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SIPC08N60C3X1SA1 Infineon Tec... 0.5 $ 1000 TRANSISTOR N-CH
SIPC03N50C3X1SA1 Infineon Tec... 0.16 $ 1000 TRANSISTOR N-CH
SIPC08N80C3X1SA2 Infineon Tec... 0.63 $ 1000 TRANSISTOR N-CH
SIPC69N65C3X1SA1 Infineon Tec... 5.09 $ 1000 TRANSISTOR N-CH
SIPC18N60CFDX1SA1 Infineon Tec... 1.25 $ 1000 TRANSISTOR N-CH
SIPC14N60C3X1SA1 Infineon Tec... 0.92 $ 1000 TRANSISTOR N-CH
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