SIPC19N80C3X1SA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIPC19N80C3X1SA1 is a type of field effect transistor (FET). FETs are a type of transistor designed to control high current or voltage output with a comparatively low level of input energy. They are especially suitable for power management and switching applications due to their high current output. SIPC19N80C3X1SA1 transistors are a type of FET called a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET).

Like other FETs, MOSFETs use a metal gate to pass voltage from a source (input) to a drain (output) in order to activate and control the current flow between the two. However, in contrast to other FETs, MOSFETs use an oxide (oxygen-containing) insulating material to electrically isolate the metal gate from the semiconductor material. This “oxide isolation” is the main advantage of MOSFETs, and is why they are used in so many applications.

The SIPC19N80C3X1SA1 is a single-gate device, meaning that it has only one gate allowing electron flow between source and drain. A single-gate device is ideal for power management, as it can easily and accurately switch between low-voltage and high-voltage states. This makes the SIPC19N80C3X1SA1 suitable for a variety of applications including motor control, solar cell switching, and lighting switching.

The SIPC19N80C3X1SA1 is especially well-suited for power switching applications because of its ability to quickly and precisely switch between high and low voltage states. The device has an On-state resistance of 0.75R and a maximum drain current (ID) of 240mA. It also has a breakdown voltage rating of 85V and a gate threshold voltage of 3.2V. This combination of features allows for precise control of the switch and a wide range of voltage and current levels.

In addition to its precision and power capabilities, the SIPC19N80C3X1SA1 also has a wide operating temperature range. It can withstand temperatures up to 125°C and still operate reliably. This makes the device suitable for a variety of applications in both industrial and consumer applications.

To sum up, the SIPC19N80C3X1SA1 is a single-gate MOSFET that is ideal for precision power management applications. Its single gate design allows for precise control of current and voltage, and its wide operating temperature range make it suitable for a variety of applications ranging from motor control to lighting switching. Its features make it an ideal choice for a wide range of applications, from industrial to consumer.

The specific data is subject to PDF, and the above content is for reference