SIPC30N60C3X1SA2 Allicdata Electronics
Allicdata Part #:

SIPC30N60C3X1SA2-ND

Manufacturer Part#:

SIPC30N60C3X1SA2

Price: $ 2.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR N-CH
More Detail:
DataSheet: SIPC30N60C3X1SA2 datasheetSIPC30N60C3X1SA2 Datasheet/PDF
Quantity: 1000
4077 +: $ 1.83438
Stock 1000Can Ship Immediately
$ 2.04
Specifications
Series: *
Part Status: Active
Description

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The SIPC30N60C3X1SA2 is a type of transistor, specifically classified as a Field Effect Transistor (FET) and, more specifically, as a Metal Oxide Semiconductor FET (MOSFET). The SIPC30N60C3X1SA2 feature set makes it a Single MOSFET, meaning that it is composed of a single semiconductor with a metal oxide layer.The SIPC30N60C3X1SA2 is designed for a variety of possible applications including: linear and switching applications, AC or DC power control, and power switching and amplification. This MOSFET is capable of operating at a voltage of 450V and a current of 30A, with a drain-source breakdown voltage of 600 V. This makes the SIPC30N60C3X1SA2 well suited to a variety of applications, including power supplies, audio, and lighting control.The SIPC30N60C3X1SA2 is capable of a wide range of operations from simple on/off switching to complexpulse-width modulation. The SIPC30N60C3X1SA2 is designed to handle fast switching speeds, so it can be used for high-frequency applications, such as RF amplifiers and switching circuits.The SIPC30N60C3X1SA2 has a relatively low gate-to-source capacitance and gate charge, making it ideal for applications that require a fast switching response. The SIPC30N60C3X1SA2 also features excellent thermal characteristics. This makes it well suited to high-power applications, such as DC-DC converters or motor control systems.The SIPC30N60C3X1SA2 works on the principle of a voltage applied to the gate-source terminal causing a current to flow between the source and drain terminals. This is due to the presence of a conductive channel that is created between the source and drain by the gate voltage. By manipulating the voltage applied to the gate, the current flow between the drain and source can be modulated.The SIPC30N60C3X1SA2 also features low on-resistance, making it well suited for power switching and control applications. This means that it can supply higher currents with lower power dissipation, making it ideal for applications such as DC-DC converters, motor control systems, and other power control applications.Overall, the SIPC30N60C3X1SA2 is a versatile single MOSFET that is ideal for a variety of applications. Its low gate-to-source capacitance and gate charge make it suitable for fast switching applications, while its low on-resistance makes it ideal for power switching and control applications. The SIPC30N60C3X1SA2 is a suitable MOSFET for a range of applications where high voltage, high current, and a fast switching response is required.

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SIPC05N60C3X1SA1 Infineon Tec... 0.28 $ 1000 TRANSISTOR N-CH
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