SIPC14N60C3X1SA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIPC14N60C3X1SA1 is a fully symmetrical silicon n-channel enhancement-mode insulated gate power field effect transistors (FET). This device can handle significant power that makes it suitable for a variety of applications such as controlling DC-DC converters, AC-DC converters, or for load and line synchronization. Its features such as reverse body diode, low on-state resistance, and high dielectric strength further enhance the performance of this device.

This device utilizes advanced processing and packaging technology that ensures high power handling capability. It has a maximum power dissipated WSS (Single Source) of 567W at 25C, and an on-state resistance RDS(ON) at 10V of 0.065Ω. This low resistance and high power dissipation makes SIPC14N60C3X1SA1 suitable for automotive and industrial applications where lower on-state resistance means improved efficiency. This device also features a PFO (Package Forwarding Optimized) technology that helps reduce the heat generated due to higher power dissipation.

When the gate voltage of the SIPC14N60C3X1SA1 device is made more positive than the source, the channel is induced between the source and the drain. This current further passes through the channel and acts as the main driving force, also known as drain-source current. This current can be controlled by the gate voltage, as the gate voltage increases more current flows through the channel. The main advantage of this type of device is that it can be used to control the current flow between the source and the drain.

This device features a low gate threshold voltage of 3.2V, which allows a low gate voltage to turn on the device that further enhances the efficiency of the device. Furthermore, the connected gate capacitance (CGS) of 4.2nF helps in better frequency responses. Additionally, this device features a high dielectric strength that makes it suitable for high-density and high-power applications. The high dielectric strength also helps prevent electrical breakdown.

The SIPC14N60C3X1SA1 is suitable for use in DC-DC converters, AC-DC converters, and other power applications where low on-state resistance is critical. These applications include motor drives, LED lighting, solar inverters, DC-DC adaptors, automotive, and more. Furthermore, this device is not only highly efficient but also has the added benefit of improved thermal performance and power dissipation.

In conclusion, the SIPC14N60C3X1SA1 is a fully symmetrical single n-channel enhancement-mode insulated gate power field effect transistor. It offers a low on-state resistance and high power dissipation, which are great advantages in controlling power applications. The low gate threshold voltage of 3.2V and connected gate capacitance of 4.2nF further increases efficiency. This device is suitable for a variety of applications such as controlling DC-DC converters, AC-DC converters, motor drives, LED lighting, solar inverters, DC-DC adaptors, automotive, and more.

The specific data is subject to PDF, and the above content is for reference