SIPC07N50C3X1SA1

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The SIPC07N50C3X1SA1 is a high-voltage N-Channel Enhancement Mode Field Effect (FET) Transistor suitable for a range of applications, including motor controllers, switching power supplies and other switching regulators, DC-DC converters, lighting, solenoid, and relay drivers, AC inverters, amplifiers and much more. Developed by Vishay, this MOSFET is suitable for switching applications and features a single N-channel, hexagonal-shaped MOSFET. It has a drain source Voltage of 500V and a gate source Voltage of ±25V with a drain current of 30A. Furthermore, this FET transistor comes with a maximum junction temperature of 175°C.

The SIPC07N50C3X1SA1 works on the principle of Field Effect. This transistor is operated as a symmetric type of device, meaning both the source and drain results are identical. This makes the SIPC07N50C3X1SA1 an ideal choice for applications where source current and sink current are required and need to be kept balanced. The device works as an amplifier, where a small current at the gate controls a larger current passing through the drain and source terminals. This results in the controlling of voltage and current levels, providing the user with higher levels of accuracy and efficiency.

The fact that the device works on the principle of Field Effect means that the conversion of AC current to DC current is handled more effectively. This advancement helps reduce the power wastage and increase the effectiveness of the switching regulator, as the voltage and current levels are more precisely managed. When compared to standard power MOSFETs, this transistor also offers improved-body diodes, meaning it can also be used to control rectifiers and other standard power applications.

The SIPC07N50C3X1SA1 is a great choice for many applications, including motor controllers, lighting, solenoid and relay drivers, AC inverters, amplifiers and much more. This transistor is commonly used in DC-DC converters or power switch design, due to its high current capabilities and improved-body diode.

In conclusion, the SIPC07N50C3X1SA1 is a high-voltage N-Channel Enhancement Mode Field Effect (FET) Transistor developed by Vishay. This transistor is suitable for applications such as motor controllers, switching power supplies, lighting, solenoid, and relay drivers, amplifiers, DC-DC converters, and AC inverters. The device operates on the principle of Field Effect and can be used to control rectifiers and other standard power applications. Furthermore, it comes with a maximum junction temperature of 175°C and offers a drain current of up to 30A.

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