SIPC14N80C3X1SA2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIPC14N80C3X1SA2 is a high voltage, low on-state resistance (RDS(on)) N-channel Mosfet. It is widely used in various electronic circuits for switching and amplifying low-voltage signals and is one of the most popular FETs available.

Application Fields

The SIPC14N80C3X1SA2 is best suited for various automotive applications such as switching low-voltage signals in CAN controllers, ignition systems, sensors, and so on. Its low RDS(on) ensures high efficiency and improved power dissipation. It can also be used in various industrial and consumer applications such as light dimmers, motor controls, and power conversion.

Since its RDS(on) is very low, the SIPC14N80C3X1SA2 can also be used in applications that require high switching speed and fast signal processing, such as real-time processing in industrial machines or medical equipment.

Working Principle

The SIPC14N80C3X1SA2 is an N-channel MOSFET which operates on the principle of Electron Tunneling. When a small gate voltage is applied, a small current (ie, In) flows through the body of the FET, forming an inversion layer that enables electrons to flow through the P–N junction. As more gate voltage is applied, this inversion layer thickens and thus a large current flows through the P–N junction.

The SIPC14N80C3X1SA2 can handle a maximum drain-source voltage (VDS) of 14V and a drain current (ID) of 80A. It exhibits excellent switching speed with a typical turn-on time of 15ns and a turn-off time of 10ns. The RDS(on) of the SIPC14N80C3X1SA2 at 10V is only 34mΩ, making it one of the best MOSFET for high-efficiency electronic applications.

The specific data is subject to PDF, and the above content is for reference