SIPC10N60C3X1SA2

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The SIPC10N60C3X1SA2 MOSFET is a high-performance 2nd generation enhancement mode silicon gate power field-effect transistors with excellent safe operating area and very low on-state resistance. The transistor features third generation planar stripe MOSFET technology, which provides an extremely low RDS(on) and a high avalanche capability. It benefits from an improved avalanche innovation and a high gamma, with an integrated electrostatic protection (ESD) circuit, providing improved robustness and simplified driving requirements.

The high-performance transistor is suitable for application in high power switches, such as Server, Switch, UPS and Datacenter. The high current capability allows for switching currents up to 30A. The device also offers a low on-state voltage drop (VDSS) which ensures more efficient system operation, resulting in lower power dissipation. The device enables a usage for operation temperature up to 175°C which allows for a high reliable operation with excellent junction temperature drops.

The SIPC10N60C3X1SA2 is a N-Channel MOSFET that consists of two parts: a low-resistance metal-oxide substrate and a silicon control gate. This device is used as an electronic switch that can be turned on or off with a simple voltage signal between the gate and source. The source electrode is connected to the source terminal, the drain electrode is connected to the drain terminal, and the gate electrode is connected to the gate terminal.

When a positive voltage is applied to the gate electrode, the transistor is turned on. This is called \'enhancement mode\' and causes electrons to flow between the source and drain terminals. If a negative voltage is applied to the gate, the transistor is ‘turned off’ and no current can flow. This is called the depletion mode.

The SIPC10N60C3X1SA2 is widely used in high power systems, allowing for a very low on-state resistance and a high avalanche capability. It has an excellent safe operating area and an integrated Electro static discharge (ESD). Given its temperature stability, the device is a very attractive option for those seeking to achieve high reliability operations.

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