SIPC26N60CFDX1SA1

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Introduction

The SIPC26N60CFDX1SA1 is a single N-channel Advanced HEXFET Power MOSFET. It is designed to deliver outstanding performance in a variety of switching applications and can offer up to 3% efficiency improvement over standard Power MOSFETs. The SIPC26N60CFDX1SA1 is optimized to best meet the applications that require high speed switching, low gate charge and low on-resistance. This device is also optimized with extremely low input capacitance and rise time.

Application Field

This device can be used in a variety of applications due to its wide operating range. It can be used to deliver high speed performance in power conversion, PWM motor driving systems, power supplies and battery management systems. It is also suitable for current-mode switching, such as in DC-DC converters, brushless motor controllers, precision converters and other high power switching applications. This device is also capable of operating at low gate-source voltages, which makes it a great choice for buck converters or other highly efficient power management systems. The SIPC26N60CFDX1SA1 uses a high degree of integration and the latest advanced process to achieve high speed switching and low on-resistance with high reliability.

Working Principle

The SIPC26N60CFDX1SA1 is a self-driven device, meaning that it is designed to switch itself on and off as soon as its control terminal (gate) is charged or discharged. When the control terminal (gate) is at a positive voltage, the device turns on by allowing current to flow through its source and drain pins. When the gate voltage is reduced, the device is turned off and the current flow is blocked. This allows the device to function as a switch or a power amplifier.

The SIPC26N60CFDX1SA1 can handle currents up to 36A and features superior thermal performance due to its low RDS(on). The device also has a full-rated drain-source voltage of 500V and an operating temperature range from -55°C to +175°C.

The device incorporates numerous features, such as an optimized power handling design, low input capacitance, a fast reverse body diode, an advanced HEXFET process, and a self-drive current level of 1A. Additionally, the SIPC26N60CFDX1SA1 also has built-in ESD protection and internal thermal shut-down protection.

Conclusion

The SIPC26N60CFDX1SA1 is an advanced power MOSFET with high switching speeds, low on-resistance, and superior thermal performance. This device can be used in a variety of applications due to its wide operating range and can offer up to 3% efficiency improvement over standard power MOSFETs. The device also features built-in features such as ESD protection and thermal shut-down protection, making it a great choice for applications where reliable performance and operation longevity are key.

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