SMUN5113T1G

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	MUN51**T
Supplier Device Package:	SC-70-3 (SOT323)
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	202mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IntroductionSMUN5113T1G is a single, pre-biased bipolar junction transistor (BJT) that has been developed by Semtech Corporation, a leading semiconductor device manufacturer. This transistor is designed to reduce cost and power consumption in a wide range of applications. It features low power losses due to its optimized die size, which is less than half the size of standard transistors. This device also features improved temperature stability, higher DC current gain, lower base resistance, and a higher breakdown voltage. DescriptionThe SMUN5113T1G is a NPN-type BJT. It is an active device with a high current gain, a low saturation voltage, and a high breakdown voltage. The maximum collector current is 500 mA, and the DC current gain is typically 400. The collector-to-emitter saturation voltage is typically 0.2 V, and the collector-to-base breakdown voltage is typically 40 V. The power dissipation is typically 0.5 W. The junction temperature range is -55°C to 150°C. Working PrincipleThe operation of the SMUN5113T1G can be explained using the simple BJT model shown in Figure 1. This transistor consists of three layers: the emitter, base, and collector. The emitter is the positive terminal, and the collector is the negative terminal. A positive voltage applied to the base allows holes to be injected into the collector region, creating a voltage drop. The collector current is proportional to the base current and the DC current gain. The base-to-emitter voltage creates an electric field across the transistor, which allows a current to flow from the emitter to the collector, as shown in Figure 2. If the base-to-emitter voltage is increased, the current flowing from the emitter to the collector will also increase. The SMUN5113T1G also features a low base resistance and a low saturation voltage, which reduce power losses and improve efficient performance. The low resistance reduces voltage drops across the transistor, while the low saturation voltage reduces power losses due to conduction. ApplicationsThe SMUN5113T1G is suitable for a wide range of applications. These include power switching, converters, linear amplifiers, and temperature sensing applications. Power switching applications benefit from the IPT’s low power losses and high current gain, as it allows for efficient operation at high frequencies. In converters, this device is used in the output stage, allowing for efficient power transmission. In linear amplifiers, the low base resistance improves signal amplification, while the high current gain allows for signal amplification over a wide range of frequencies. Finally, the low saturation voltage and high breakdown voltage make this transistor suitable for temperature sensing applications. ConclusionThe SMUN5113T1G is a single, pre-biased bipolar junction transistor (BJT) that provides high performance at a low cost. Its optimized die size and low power losses make it suitable for a wide range of applications, including power switching, converters, linear amplifiers, and temperature sensing. Its low base resistance and high current gain also provide improved signal amplification, making it more suitable for high frequency applications. Moreover, it provides a high breakdown voltage and a low saturation voltage, which further improve the efficiency of this device. As a result, the SMUN5113T1G transistor is an ideal choice for various applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description