Allicdata Part #: | SMUN5211DW1T1GOSTR-ND |
Manufacturer Part#: |
SMUN5211DW1T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.187W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | SMUN5211DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06371 |
6000 +: | $ 0.06017 |
15000 +: | $ 0.05485 |
30000 +: | $ 0.05131 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 187mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | MUN51**DW1T |
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- SMUN5211DW1T1G Application Field and Working Principle
The SMUN5211DW1T1G Transistors - Bipolar (BJT) - Arrays, Pre-Biased, is a monolithic device that provides a more convenient solution for high current and voltage applications. The SMUN5211DW1T1G consists of multiple low-voltage PNP transistors that are pre-biased with an integrated pre-bias network. This simplified device eliminates the need for complex bias circuits, thereby achieving higher circuit efficiencies and improved performance. Additionally, the SMUN5211DW1T1G operates at higher speeds and lower temperatures than a traditional BJT, which allows for improved reliability and longer system life.
The SMUN5211DW1T1G is well suited for applications such as power supplies, high-voltage rectification and current regulation, brushed and brushless DC motor control, n-channel enhancement mode MOSFET driver, and high speed switching. The pre-biased array allows for higher current operation with less lead inductance and less complexity of the switching circuit. Additionally, the operation of the SMUN5211DW1T1G can be tailored to the application by varying the pre-bias voltage and current depending on the particular current requirement.
The SMUN5211DW1T1G operates on pre-selected bias current and pre-selected bias voltage. The bias current is limited to a value determined by the components of the pre-bias network, while the bias voltage is determined by the voltage rating and current rating of the transistor array. In order to limit the voltage and/or current, a resistor can be connected across the array terminals. By doing so, a resistor will reduce the forward voltage across the array and limit the current flow.
The SMUN5211DW1T1G operates at the transistor collector-emitter voltages and at bias voltages ranging from 4V to 40V with a maximum bias current of 12A. The device\'s wide voltage range allows it to be used in different applications and conditions. Additionally, the SMUN5211DW1T1G can withstand up to 100V load withstand in order to provide maximum circuit protection. The transistor array can also cope with high switching frequency and can be used in high frequency switching arrangements.
In conclusion, the SMUN5211DW1T1G is an ideal solution for high current, pre-biased transistor arrays. The device is well suited for applications in power supplies, high-voltage rectification, current regulation, brushed and brushless DC motor control and n-channel enhancement mode MOSFET driver circuits. Additionally, the device can operate at higher speeds and lower temperatures than traditional BJT transistors and can also tolerate high switching frequency and load withstand voltages up to 100V.
The specific data is subject to PDF, and the above content is for reference
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