Allicdata Part #: | SMUN5111DW1T1GOSTR-ND |
Manufacturer Part#: |
SMUN5111DW1T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 50V 0.1A SOT363 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 10... |
DataSheet: | SMUN5111DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06371 |
6000 +: | $ 0.06017 |
15000 +: | $ 0.05485 |
30000 +: | $ 0.05131 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300nA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Power - Max: | 385mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | MUN51**DW1T |
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SMUN5111DW1T1G application field and working principle
The SMUN5111DW1T1G is a high-speed and high-reliabiliy bipolar transistor array that is designed for different application fields. It is used for high-voltage switching, such as for computers and telecommunications. It can also be used for power applications, such as motor control and power conversion.
The SMUN5111DW1T1G is ideal for applications where high frequency performance is required. It has very low noise levels, making it suitable for audio applications. It also supports high switching speeds, low power dissipation and high accuracy.
The SMUN5111DW1T1G is composed of an array of bipolar transistors. Each transistor has an NPN and PNP configuration. The NPN type provides current amplification, and the PNP type provides resistance. The transistors are configured in a common emitter configuration, which enables them to operate with high current gains and low noise levels.
The SMUN5111DW1T1G is a high-frequency transistor array, meaning it is able to operate at frequencies up to 1 GHz. It also supports low-voltage operation, allowing it to be used in a variety of applications. It has wide thermal performance range, allowing it to remain stable and reliable even in extreme temperatures. It also offers high performance in terms of surge protection, making it well-suited for industrial applications.
The operating principle of the SMUN5111DW1T1G is relatively simple. When the voltage across the transistor array is increased, current is allowed to flow from the power supply. This current then passes through the NPN and PNP transistors, which provide amplification and resistance, respectively. This produces a voltage across the collector-emitter terminals, which is then used to control the current in the external circuit.
In summary, the SMUN5111DW1T1G is a high-speed and high-reliability bipolar transistor array designed for different application fields. It is composed of a common emitter configuration, allowing it to operate with high current gains and low noise levels. It is also able to operate at frequencies up to 1 GHz, and offers high performance in terms of surge protection and thermal performance. Its operating principle is relatively simple, allowing it to be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...