SMUN5213DW1T1G

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	MUN52**DW1T
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	187mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SMUN5213DW1T1G is one of a series of pre-biased transistors, specifically NPN bipolar junction transistors (BJT), which are capable of offering high surge current capacity. It is particularly well-suited to automotive applications requiring low power consumption and minimised thermal management challenges.This device consists of four NPN transistors pre-bias connected in parallel, with each having its own individually doped collector and base. This allows for a significantly improved dynamic energy efficiency without compromising either on-state or off-state performance. The use of silicon as the substrate material ensures good heat dissipation characteristics across the full temperature range.The SMUN5213DW1T1G is particularly well-suited for use in a range of automotive applications, including engine and brake control systems, DC motor acceleration and braking, voltage and current regulation, and guidance systems. It is commonly used in ECU (engine control unit) device designs requiring space- and cost-saving features and excellent thermal management performance.When it comes to its working principle and operation, the SMUN5213DW1T1G operates by controlling the current in both the collector and base regions. The biasing circuit ensures that the current remains constant during both on and off states. The reversible current transfer between the collector and base regions is the vital key to successful operation.The structure of the SMUN5213DW1T1G features four bipolar junction transistors (BJTs) integrated into a single package. The BJTs are connected in parallel in order to reduce power loss due to current leakage and increase heat dissipation. Additionally, the integrated biasing circuit provides a stable operating voltage, allowing for higher current output and ensuring high reliability.Due to its small form factor and excellent thermal performance, the SMUN5213DW1T1G is very suitable for use in automotive, aerospace, and industrial applications. It is also suitable for use in many data acquisition and process control systems, as it can handle a wide range of temperatures.In conclusion, the SMUN5213DW1T1G is a pre-biased, NPN bipolar junction transistor (BJT) array package suitable for automotive, aerospace, and industrial applications. Its structure features an improved dynamic energy efficiency, excellent thermal management performance, and superior current transfer between the collector and base regions. Its small form factor and excellent thermal management performance make it ideal for use in many applications.

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