SMUN5335DW1T1G

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	MUN53**DW1
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	187mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SMUN5335DW1T1G application field and working principleTransistors - Bipolar (BJT) - Arrays, Pre-Biased The SMUN5335DW1T1G is an array of three N-channel depletion-mode MOSFET transistors employed in a variety of applications. These devices offer very low RDS(ON) values of less than 30 mOhm, excellent signal linearity, low-threshold voltage, low capacitance and low on-resistance to support high performance applications. This device is produced using high-performance silicon dioxide MOSFET technology with integrated channel protection. It has excellent linear characteristics and a wide operating temperature range for improved efficiency and reliability.The SMUN5335DW1T1G is suitable for various power management po wer supply circuits and general purpose switching applications. This device is capable of providing high current switching with low on-resistance and reduced power consumption. It is especially useful in systems with multiple voltage levels. This device is available in three package sizes to accommodate various board layout requirements. All three packages are rated up to 100V, with the smallest package having a threshold voltage of -1.8V. The SMUN5335DW1T1G features low gate charge and low gate-to-source leakage current to reduce wide switching losses and ensure high efficiency operation. The SMUN5335DW1T1G works on the principle of a P-channel depletion-mode MOSFET (PMOS) in a vertical three-transistor array. The low RDS(ON) values of less than 30 mOhm are achieved by an optimized gate to source voltage (VGS) overdrive. The first transistor is connected to a source for providing the biasing current and the second and third transistors are connected to the gate for providing a low parasitic capacitance. The SMUN5335DW1T1G is a P-channel depletion mode MOSFET array with integral body diodes and Clamp-style logic level gate drive. The device has integrated regenerative gate protection diode and ESD protection, allowing the device to be safely used in applications with high amount of ESD pulses. The BCD technology used in this device gives higher power savings at higher operating temperatures when compared to other technologies such as CMOS devices. It also leads to better surge handling capabilities and faster switching. The SMUN5335DW1T1G is a highly reliable device with good thermal behavior. It is recommended for use in power supply circuits with multiple voltage levels and it is capable of providing high current switching with low on-resistance. This device features low gate charge and low gate-to-source leakage current to reduce wide switching losses and ensure high efficiency operation. Additionally, its regenerative gate protection diode and integrated ESD protection makes it suitable for various applications.

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