SMUN5312DW1T1G

DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Base Part Number:	MUN53**DW1
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	187mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SMUN5312DW1T1G is a pre-biased array transistor with dual Bjt NPN transistors. It is fabricated by Nexperia, a semiconductor company focused on creating and delivering high-performance technology solutions for the electronics industry. The company is headquartered in Netherlands and has earned its reputation for providing customers with the highest quality products and solutions.SMUN5312DW1T1G is widely used in applications such as power supplies, switching, regulating and amplify circuits. It comes with a package dimension of 2 x 2 mm² and a very low operating temperature of -40°C to 105°C. Furthermore, it offers a very low saturation voltage of 0.35V, a collector-base capacitance of 0.03pF, a typical current gain of 100 and a power dissipation of 600 mW.The SMUN5312DW1T1G consists of two NPN transistors in a dual-in-line package which has two emitter pins and three collector pins. It is designed to be used in pre-biased conditions, in which the base-emitter bias should be beforehand achieved. This means that when the pre-biased condition is satisfied, no additional voltage need to be applied to the base-emitter junction, thus preventing any further overheating or saturation of the transistor.The working principle of SMUN5312DW1T1G is based on the fact that, as current flows between the base and emitter elements, a voltage potential appears across the base-emitter junction and determines the potential difference. This potential difference can be either positive or negative, depending on the arrangement of the transistors. Then, the collector-base current can be determined by adjusting the voltage potential between the collector and base and the transistor can amplify the current and supply a current flow to the load.In conclusion, SMUN5312DW1T1G is an array transistor with dual NPN transistors and is designed to operate in pre-biased conditions. The device is suitable for use in many different applications, such as power supplies, switching, regulating and amplifying circuits. It has a very low saturation voltage and very low operating temperature, and the working principle of this transistor involves a voltage potential between the base and emitter junctions and adjusts it accordingly in order to regulate a current flow.

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