| Allicdata Part #: | SMUN5116DW1T1G-ND |
| Manufacturer Part#: |
SMUN5116DW1T1G |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS 2PNP PREBIAS 0.187W SOT363 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
| DataSheet: |  SMUN5116DW1T1G Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.06371 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
| Base Part Number: | MUN51**DW1T |
| Supplier Device Package: | SC-88/SC70-6/SOT-363 |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type: | Surface Mount |
| Power - Max: | 187mW |
| Frequency - Transition: | -- |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | -- |
| Resistor - Base (R1): | 4.7 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SMUN5116DW1T1G is a type of transistor array manufactured by Vishay Semiconductor. It is designed for use in pre-biased application circuits. A pre-biased circuit is one in which a certain amount of bias voltage is applied to the transistors prior to loading, resulting in lower supply power consumption and improved time-to-datum Performance. This device can be applied in many different circuits and applications, such as analog and digital signal processing, data conversion, and more. The SMUN5116DW1T1G is made up of three pairs of NPN-PNP transistors, commonly known as BJTs. It is a pre-biased device, meaning that the bias voltage is applied before the application of load current. This allows the transistors to operate at lower voltage and current levels, resulting in a more efficient performance. One of the key features of this device is its low on-resistance. This allows it to provide a faster response time, which translates into an overall improved performance in many applications.The device is typically used in applications requiring power amplifier stages with low input and output offset voltage. It can be used to provide an amplification stage for audio applications and systems. It is also commonly used in signal filtering systems, such as low-pass and high-pass filters, band-pass filters, and more. Additionally, the device can be applied in analog-to-digital data conversion, as well as level shifting and signal conditioning.The SMUN5116DW1T1G offers a number of advantages when compared to standard BJTs. For instance, it has a lower operating voltage, an improved noise figure, and more efficient performance. In addition, it does not require additional biasing sources, as the correct bias voltage is already integrated. This reduces power consumption and increases reliability. Furthermore, the device employs overcurrent and over-temperature protection, ensuring that it is reliable even during power surges and prolonged exposures to high temperatures.The device is able to operate in a wide range of temperature ranges, from -55°C to +125°C. It is also capable of handling currents up to 5A and voltages up to 30V. The device features enhanced gain and ESD protection, ensuring that it is suitable for use in industrial and automotive applications. Furthermore, it can be used with a variety of popular circuit technologies, such as TTL, CMOS and ECL.The overall working principle of the SMUN5116DW1T1G is relatively simple. The device is designed to act like three pairs of NPN-PNP transistors. The NPN transistors will act as the primary current source, while the PNP transistors will constitute the secondary current source. When a voltage is applied to the device, current will flow from the NPN transistor through the PNP transistor, creating an amplification stage. Through this technique, the device is able to provide an increase in signal amplitude, making it suitable for various applications including audio amplification and signal conditioning.In conclusion, the SMUN5116DW1T1G is a pre-biased transistor array which features several advantages compared to traditional BJT arrays. It offers improved performance, lower operating voltage, and enhanced reliability. It can be used in a variety of applications, including audio amplification, signal filtering, analog-to-digital conversion and level shifting. Furthermore, it can be used in a range of temperatures and voltage/current levels, making it suitable for a variety of industrial and automotive applications.The specific data is subject to PDF, and the above content is for reference
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