Allicdata Part #: | SMUN5235DW1T3G-ND |
Manufacturer Part#: |
SMUN5235DW1T3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.187W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | SMUN5235DW1T3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05485 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 187mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Description
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SMUN5235DW1T3G is a low voltage pre-biased array designed for use in various applications. It is manufactured by Infineon Technologies and is a part of the Infineon family of transistors.The SMUN5235DW1T3G is a pre-biased transistor array that comprises eight NPN transistors with an internal bias voltage source. The array is designed for applications such as pico-power and medium voltage discrete transistors, as well as being suitable for many industrial, automotive, and consumer applications.The SMUN5235DW1T3G is capable of operating at very low current levels, enabling it to be used in a wide range of applications requiring low power consumption. It has a high gain-bandwidth product, good collector-emitter saturation voltage, and low base-emitter saturation voltage.The SMUN5235DW1T3G has a Pd (dissipation) rating of 300mW, and an operating temperature range of -40˚C to 125˚C, making it well-suited for use in harsh environments.The SMUN5235DW1T3G has a wide range of applications, such as motor control, DC motor management, portable instrumentation, and speed control modules. It can also be used in applications requiring high on-state characteristics, fast switching, and enhanced step-load performance.Overall, the SMUN5235DW1T3G is an efficient and reliable transistor array, making it suitable for a variety of applications.Working PrincipleThe SMUN5235DW1T3G is a pre-biased transistor array that operates based on the principle of bipolar junction transistors (BJT). BJTs are transistors that comprise three layers of semiconductor material (base, emitter and collector) and rely on the movement of charge carriers to control current flow.When a voltage is applied at the base of a BJT, it creates an electric field which causes charge carriers to move, resulting in current flow. The amount of current flowing through the transistor depends on the voltage and the size of the base-emitter junction. The SMUN5235DW1T3G is designed to operate in the saturation region, meaning that the collector current is always greater than the base current. This is the most efficient type of transistor operation, as the transistors can operate at higher switching frequencies and at lower supply voltages.ConclusionThe SMUN5235DW1T3G is an efficient and reliable pre-biased transistor array manufactured by Infineon Technologies. It is suitable for a wide range of applications, such as motor control, DC motor management, portable instrumentation, and speed control. The array is based on the principle of bipolar junction transistors and operates in the saturation region, making it very efficient and allowing it to operate at high switching frequencies.The specific data is subject to PDF, and the above content is for reference
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