SMUN2214T1G Discrete Semiconductor Products |
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Allicdata Part #: | SMUN2214T1GOSTR-ND |
Manufacturer Part#: |
SMUN2214T1G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 230MW SC59 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | SMUN2214T1G Datasheet/PDF |
Quantity: | 12000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04305 |
6000 +: | $ 0.03744 |
15000 +: | $ 0.03183 |
30000 +: | $ 0.02995 |
75000 +: | $ 0.02808 |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | MUN2214 |
Supplier Device Package: | SC-59 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 230mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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SMUN2214T1G is a type of single, pre-biased bipolar junction transistor (BJT). It is a three-terminal electronic device that consists of two p-type and n-type semiconductor layers. The device contains one base terminal, one emitter terminal and one collector terminal. The base terminal is typically used to turn the transistor on or off while the collector and emitter terminals provide current flow through the device. In a single, pre-biased BJT, the current between the collector and the emitter is supplied by an external power supply, whereas in a double BJT, the current between the base and emitter diodes is supplied by an internal diode.
The SMUN2214T1G is most commonly used as a low voltage amplifier because it can be used with both ac and dc voltages. It is also used in high speed oscillators, frequency multipliers, linear amplifiers, switch circuits and other semiconductor-based devices. In addition, this device is capable of providing power gains up to 25 dB and a high signal-to-noise ratio. This makes it ideal for signal processing applications such as signal acquisition, signal-detection and audio signal processing.
The SMUN2214T1G has a maximum collector-emitter voltage rating of 20 V, a maximum collector current rating of 2A and a maximum power dissipation of 220 mW. It has a low noise figure of 2.2 dB and a rapid switching time of 500 ns. The device is able to operate over a wide temperature range of -40 to 85°C and is able to operate in a wide range of environmental conditions including humid, dusty, hot and cold temperatures.
The working principle of the SMUN2214T1G is based on the electrical behavior of the PN junction. When a potential difference is applied in the forward direction, a current flows through the device from the collector to the emitter. This current flow results in a voltage drop across the device. This voltage drop is used to supply current to the base and collector. The output voltage is determined by the base current and the voltage gain of the device.
The SMUN2214T1G is an ideal device for applications that require precision switching, low noise operation and high speed response. It is capable of providing precision current and voltage regulation and can be used with both ac and dc applications. It is also suitable for applications in a variety of power supply applications such as regulators, amplifiers, converters and inverters.
The SMUN2214T1G is a versatile device that is suitable for a wide range of applications. It is capable of providing precision current and voltage regulation, as well as high speed switching performance. It is also suitable for precision current and voltage regulation, as well as for voltage and current amplifying applications. Furthermore, it is capable of providing reliable performance over a wide temperature range and in various environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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