SMUN5112DW1T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

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SMUN5112DW1T1G is an array of bipolar pre-biased transistors. It offers customers the benefit of a single device with the design flexibility, performance, scalability and short delivery times associated with discrete components.SMUN5112DW1T1G is an innovative product and is an important development within the scope of bipolar transistor technologies. It includes two transistors that are internally connected and pre-biased with a voltage of 5V. This allows engineers to easily use the device as a two-element dual-gate transistor. The device has built-in protection features and is protected from electrostatic discharge (ESD) up to 2KV.The SMUN5112DW1T1G is ideal for applications such as level-shifting, power switches, and power amplifiers. It offers excellent overload protection and temperature stability, with ultra-low on-resistance. SMUN5112DW1T1G also features current-sharing transistors and total gates connected in common for a single driver interface. This configuration simplifies driver circuit design and reduces system size.SMUN5112DW1T1G is a reliable device and is engineered for use in high temperature and harsh environment applications. It supports up to 30V, with a maximum power rating of 800W. It also supports reverse gate voltage protection up to 12V and has a total gate-source capacitor of 0.06pF.The working principle of SMUN5112DW1T1G is based on the concept of bipolar (pnp and npn) transistor arrays. These two transistor elements create two internal diodes which, when pre-biased at 5V, enable the device to be used as a dual-gate transistor.The device includes two pre-biased transistors and two pre-connected diodes connected to the collector-base junction of each transistor. The first diode connected to the collector will be forward biased and the second one will be reverse biased. Both transistors can be driven from an external logic circuit with only one connection at the gate. The output current is then shared by the two transistors.SMUN5112DW1T1G is an ideal candidate for a wide variety of applications requiring level-shifting, power switches, and power amplifiers. It is also used in wide range of applications such as automotive and heavy industries, communications, consumer electronics, industrial automation, instrumentation, medical electronics, etc.SMUN5112DW1T1G provides a major advantage in terms of scalability, which is an important factor in prototyping and developing systems. The device also features current-sharing transistors and total gates connected in common to simplify driver circuit design and reduce system size. The device also features ESD protection up to 2KV.In conclusion, SMUN5112DW1T1G is a next-generation pre-biased bipolar transistor array that offers customers the benefit of a single device with the design flexibility, performance, scalability, and short delivery times associated with discrete components. The device is ideal for applications such as level-shifting, power switches, and power amplifiers, as well as a wide variety of other applications.

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