SMUN5114T3G

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SMUN5114T3G is a single pre-biased lateral NPN bipolar junction transistor (BJT) which has high performing characteristics and is suitable for high frequency operation. With low thermal resistance and an integrated package, it is perfect for a variety of different applications.

The SMUN5114T3G device is a Bipolar NPN junction type, pre-biased for easy use. The device offers various features such as high current gain, high speed switching and excellent quality performance. It is designed for superior performance in AC and DC switching applications, including high-frequency operations.

The device has a collector-base voltage of 40V, and a collector-emitter voltage of 10V. It also has a maximum DC current gain of 35 dB and a maximum switching frequency of 20 GHz. The device also has a wide junction temperature range from -55°C to 150°C.

The device offers superior capabilities when used for common emitter or common base circuits in applications that require multiple electrical properties, such as voltage divider biasing, amplifier power gain and switching power gain. The wide voltage range and high-frequency capabilities make it perfect for applications that require high-performance. Additionally, it is also ideal for driving high-power transistors.

The device also has a built-in thermal resistance that can be used to control heat dissipation during operation. This makes it perfect for applications where temperature control is essential. The device is also capable of dissipating up to 35 W.

The device also offers outstanding quality performance. It has a high capability in suppressing thermal shock, along with enhanced brown-out protection. This allows it to perform reliably across a wide range of temperatures.

Due to the versatile characteristics and integrated package, the SMUN5114T3G is a great choice for many applications such as high-frequency amplifiers, switch-mode power supplies and power control circuits. Its superior performance and quality make it ideal for high-performance applications, such as high-frequency switching and power control.

The working principle of the SMUN5114T3G is relatively simple. It consists of four main parts: the base, collector, emitter and gate electrode. The base electrode forms an interface between the collector and emitter regions, where current flow is controlled by the application of an appropriate voltage. In addition, the gate electrode is used to control the current flow between the collector and emitter by providing a field-effect that assists the control.

The operation of the device is also dependent on the area of the surface of the bases where the collector and emitter currents converge. The current gain is determined by the electrical properties, such as the width of the base-collector depletion region, the gratuity of the base-collector hole injection, the mobility of the hole and the collector-emitter resistance.

To summarize, the SMUN5114T3G is a lateral NPN bipolar junction transistor pre-biased for easy use and perfect for a variety of applications. It has versatile characteristics and is ideal for high-frequency operations and power control. Its simple working principle and reliable performance make it suitable for a number of different applications.

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