Allicdata Part #: | SMUN5233DW1T1GOSTR-ND |
Manufacturer Part#: |
SMUN5233DW1T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.187W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | SMUN5233DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06371 |
6000 +: | $ 0.06017 |
15000 +: | $ 0.05485 |
30000 +: | $ 0.05131 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN52**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 187mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SMUN5233DW1T1G is a pre-biased bipolar transistor array integrated circuit created and are manufactured by NXP Semiconductors. This component is part of the Transistors - Bipolar (BJT) - Arrays, Pre-Biased family of components. This component is used in a variety of applications including use in automotive, consumer, medical and medical, consumer, and industrial solutions.NXP SMUN5233DW1T1G transistors are three-terminal devices connected in a Darlington configuration. The device is comprised of two individual NPN transistors connected in series: one is an input section, and the other an output section. The input section acts as a base current source, while the output section is controlled by the input section’s collector-emitter voltage.The maximum operating temperature of the NXP SMUN5233DW1T1G is 150°C. The maximum collector-emitter voltage is 30V, while the maximum collector current is 500mA. The minimum collector-emitter saturation voltage is listed as 0.1V maximum. The device has a thermal resistance of 45°C/W. The transistor array is RoHS compliant and is MSL-1 rated in terms of cleaning capability.The NXP SMUN5233DW1T1G is commonly used in switching applications. The device’s two transistors can be used in a variety of ways. For example, the device can be used as a single switch or in combination with another transistor to create a multichannel switch. This device can also be used in analog and digital circuits, as well as for motor control and dimming applications.These electric transistors are capable of withstanding high collector currents and can drive large current loads. They also offer low power consumption, which is beneficial for battery-powered applications. In addition, they offer a low-noise operation and are capable of handling high-frequency switching.The device is available in a variety of packages, including the standard 8-lead 6x6mm DFN, as well as the 8-lead 4x4mm and 4-lead 6x6mm DFN packages. It is also available in a surface mount package as well as a pin-in-male package. It comes in a variety of colors, including black, yellow and green.The NXP SMUN5233DW1T1G is a pre-biased bipolar transistor array capable of providing increased current load capabilities and offers low power consumption. It is commonly used in switching applications and is available in a variety of package sizes and colors. This device can also be used for analog and digital circuits, motor control and dimming applications.
The specific data is subject to PDF, and the above content is for reference
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