SMUN2212T1G

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SMUN2212T1G is an NPN single, pre-biased bipolar junction transistor (BJT) made for low-voltage, high-speed inverter, interface and amplifier applications. It is designed for use in a range of small signal and audio frequency applications.

The SMUN2212T1G is a small-size, pre-biased device with a cutoff frequency of 450 MHz, making it suitable for various high-speed and high-frequency applications. It has a maximum DC current gain of 500 and provides good linearity and low power dissipation. It is typically used as a pre-biased device in high-voltage, high-frequency switching applications.

The SMUN2212T1G has a maximum collector-emitter voltage of 50V and a maximum collector-base voltage of 70V. It can operate at temperatures up to 175°C. The device has an output current capability of 1.7A and a power dissipation of 1W. Its passivated base junction ensures low leakage and a high gain-bandwidth product of 1.2GHz.

The SMUN2212T1G is suitable for use in a range of small signal applications including amplifier circuits, analog todigital converters, amplifier cascades, and power controllers. It is also suitable for high-speed switching circuits, inverters, and interface applications such as motor controllers, electromagnetic interference filtering, and high-speed signal conditioning.

The working principle of the SMUN2212T1G is based on the operations of a bipolar junction transistor – a three-terminal semiconductor device. It allows current to flow between its collector and emitter terminals when forward-biased. This transistor has two PN junction, the base-emitter junction and the collector-base junction. The base-emitter junction is forward-biased and the collector-base junction is reverse-biased. When a small base current is applied to the base-emitter junction, a large current flows from the collector to the emitter, and this causes amplification of the input signal.

The SMUN2212T1G can be used for various small-signal and audio frequency applications, particularly for high-voltage and high-frequency switching applications. It is a pre-biased type of transistor that can operate at temperatures up to 175°C and has a maximum DC current gain of 500 with an output current capability of 1.7A. It also has a good linearity and a high gain-bandwidth product of 1.2GHz.

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