SMUN5237DW1T1G

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	MUN52**DW1T
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	187mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SMUN5237DW1T1G is a Pre-Biased Bipolar Junction Transistor (BJT) array that is designed for use as an Automotive Sensor Interface. The device is housed in a standard 8-pin SOIC-N package and provides a low-noise, reliable, and cost-effective solution for various automotive sensing applications.The SMUN5237DW1T1G array is a dual 4-channel transistor package which features 4 pre-biased BJTs in one package. Each channel can be used as an interface between digital signals (such as Hall Effect sensors) and analog circuits (such as the Amplifier that monitors the sensor output). The pre-biased BJT\'s provide a stable base voltage to the Hall Effect sensor, allowing it to accurately measure temperatures, pressure, light levels, etc.The SMUN5237DW1T1G is equipped with a reverse body diode to protect against electrostatic discharge, as well as a high gain and low power consumption design. The device has a wide common emitter voltage range that operates from 1.6V to 24V and a wide collector-emitter voltage range of 4V to 24V. The low power consumption design of the device ensures that it can be used in low power, low voltage applications.The device also features a number of sensing parameters that can be used in a variety of applications. These includes current sensing, voltage-sensing, temperature-sensing, and light sensors. The device can also be used for motor control applications and for the management of complex functions such as dynamic braking and powertrain control.The SMUN5237DW1T1G is designed to operate in temperatures ranging from -40°C to 125°C, and can operate up to 1MHz of frequency. The device also features open collector outputs, which makes it easier to interface with other types of external circuitry. This device also features excellent EMI/RFI rejection characteristics and high noise immunity, making it suitable for use in automotive applications.In addition, the SMUN5237DW1T1G device has a wide range of features to make it easy to integrate into a variety of systems. These features include an extended temperature range, low-current on-pin sensing, pre-biased non-inverting settings, and a wide common emitter voltage range. The device also includes a wide range of package options, making it easy to customize for different system requirements. The device can be soldered directly to a printed circuit board or connected to the board through header pins.Overall, the SMUN5237DW1T1G is a pre-biased Bipolar Junction Transistor (BJT) array that is designed for use as an Automotive Sensor Interface. This device provides a low-noise, reliable, cost-effective solution for various automotive sensing applications, as well as motor control and powertrain control applications. The device is a dual 4-channel transistor package with a pre-biased BJT, which provides a stable base voltage to the Hall Effect sensor, allowing it to accurately measure temperatures, pressure, light levels, and other parameters. The SMUN5237DW1T1G device is designed to operate in extended temperature ranges, low-current on-pin sensing, pre-biased non-inverting settings, and a wide common emitter voltage range. The device also features excellent EMI/RFI rejection characteristics and high noise immunity. The device is also equipped with a reverse body diode and provides multiple package options for easy integration into different systems.

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